IPL60R105P7AUMA1 vs IPL60R065P7AUMA1 对比

详细并排对比 IPL60R105P7AUMA1 出自 Infineon 和 IPL60R065P7AUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPL60R065P7AUMA1 IPL60R065P7AUMA1 - 600V 65mΩ CoolMOS P7 MOSFET | Infineon

IPL60R065P7AUMA1 - 600V 65mΩ CoolMOS P7 MOSFET | Infineon

IPL60R065P7AUMA1 ✓ 量产中

规格对比

参数 IPL60R105P7AUMA1 IPL60R065P7AUMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.82 $2.18
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS P7 —
Technology Superjunction (SJ) N-Channel Power MOSFET —
Drain-Source Voltage (VDS) 600 V —
On-Resistance (RDS(on)) max 105 mΩ —
Continuous Drain Current (ID) at Tc 33 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (Ptot) at Tc 137 W —
Gate Threshold Voltage (VGS(th)) typ 3.5 V —
Gate Charge (Qg) typ 45 nC —
工作温度范围 -55C to +150C -55 °C to +150 °C (T<sub>j</sub>)
封装 PG-VSON-4 (4-pin SMD with exposed pad) PG-VSON-4 (surface mount with exposed pad)
安装类型 Surface Mount Surface Mount
Channel Type N-Channel N-Channel
MSL 等级 [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
RoHS 状态 Compliant Compliant
无卤 Yes Yes
Lead-Free Yes —
Technology Family — CoolMOS™ P7 (superjunction)
Drain-Source Voltage (V<sub>DS</sub>) — 600 V
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25 °C) — 41 A
On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) — 65 mΩ (max)
Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25 °C) — 201 W
Gate Threshold Voltage (V<sub>GS(th)</sub>) — 3.5 V
Input Capacitance (C<sub>iss</sub>, V<sub>DS</sub>=400 V) — 2895 pF
Rise Time (t<sub>r</sub>) — 7 ns
Fall Time (t<sub>f</sub>) — 4 ns
引脚数 — 4
Polarity — Single N-channel
Drain to Source Voltage — 650 V (rating per AiEMA spec)
R<sub>DS(on)</sub> (max, V<sub>GS</sub>=10 V, T<sub>j</sub>=25 °C) — 0.053 Ω

数据手册与资源

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