IPLU300N04S41R1XTMA1 vs BSC098N10NS5ATMA1 对比
详细并排对比 IPLU300N04S41R1XTMA1 出自 Infineon 和 BSC098N10NS5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IPLU300N04S41R1XTMA1 - 40V 300A 1.15mΩ Automotive MOSFET | Infineon
IPLU300N04S41R1XTMA1 ✓ 量产中规格对比
| 参数 | IPLU300N04S41R1XTMA1 | BSC098N10NS5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.45 | $0.55 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPLU300N04S41R1XTMA1 | — |
| FET Type | N-Channel, Enhancement Mode | — |
| Technology | OptiMOS (Trench MOSFET) | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (V<sub>DS</sub>) | 40 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | 300 A | — |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) | 300 W | — |
| R<sub>DS(on)</sub> Max (V<sub>GS</sub>=10 V, I<sub>D</sub>=100 A) | 1.15 mΩ | — |
| Gate Charge (Q<sub>g</sub>, V<sub>GS</sub>=10 V) | 151 nC | — |
| Input Capacitance (C<sub>iss</sub>, V<sub>DS</sub>=25 V) | 12,090 pF | — |
| Gate-Source Voltage (V<sub>GS</sub>) | ±20 V | — |
| 工作结温 | 175 °C | — |
| Peak Reflow Temperature (AEC-Q) | 260 °C | — |
| 封装 | PG-HSOF-8-1 (8-PowerSFN, surface mount) | PG-TDSON-8-7 (SuperSO8 5x6) |
| 安装类型 | Surface Mount | Surface Mount |
| Avalanche Rating | 100% Avalanche Tested | — |
| RoHS Compliance | Yes (Green Product) | — |
| Lead-Free | Yes (100% lead-free) | — |
| Configuration | Single with built-in diode | — |
| Packing | Tape & Reel (TR) | — |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, Tc=25C) | — | 60 A |
| Continuous Drain Current (ID, Ta) | — | [DATA_NEEDED: ID Ta-rated value] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max @ VGS=10V | — | 9.8 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max +/-] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg] |
| Power Dissipation (Tc=25C) | — | 69 W |
| Power Dissipation (Ta) | — | 2.5 W |
| Diode Continuous Forward Current (IS) | — | 63 A (Tc=25C) |
| Diode Pulse Current (IS,pulse) | — | 240 A (Tc=25C) |
| Diode Forward Voltage (VSD) typ | — | 0.9 V (IF=30 A, Tj=25C) |
| Diode Forward Voltage (VSD) max | — | 1.1 V (IF=30 A, Tj=25C) |
| 工作温度范围 | — | [DATA_NEEDED: Tj min/max] |
| RoHS 状态 | — | Compliant |
| MSL 等级 | — | 1 |
| Shipping Packaging | — | Tape & Reel (T/R) |