IPLU300N04S41R1XTMA1 vs BSC098N10NS5ATMA1 Comparison
Detailed side-by-side comparison of IPLU300N04S41R1XTMA1 by Infineon and BSC098N10NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPLU300N04S41R1XTMA1
IPLU300N04S41R1XTMA1 - 40V 300A 1.15mΞ© Automotive MOSFET | Infineon
IPLU300N04S41R1XTMA1 β ActiveInfineon
BSC098N10NS5ATMA1
BSC098N10NS5ATMA1 - 100V 60A OptiMOS 5 N-Channel MOSFET | Infineon
BSC098N10NS5ATMA1 β ActiveSpecification Comparison
| Parameter | IPLU300N04S41R1XTMA1 | BSC098N10NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.45 | $0.55 |
| Manufacturer | Infineon Technologies | β |
| Part Number | IPLU300N04S41R1XTMA1 | β |
| FET Type | N-Channel, Enhancement Mode | β |
| Technology | OptiMOS (Trench MOSFET) | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (V<sub>DS</sub>) | 40 V | β |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25Β°C) | 300 A | β |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25Β°C) | 300 W | β |
| R<sub>DS(on)</sub> Max (V<sub>GS</sub>=10 V, I<sub>D</sub>=100 A) | 1.15 mΞ© | β |
| Gate Charge (Q<sub>g</sub>, V<sub>GS</sub>=10 V) | 151 nC | β |
| Input Capacitance (C<sub>iss</sub>, V<sub>DS</sub>=25 V) | 12,090 pF | β |
| Gate-Source Voltage (V<sub>GS</sub>) | Β±20 V | β |
| Operating Junction Temperature | 175 Β°C | β |
| Peak Reflow Temperature (AEC-Q) | 260 Β°C | β |
| Package | PG-HSOF-8-1 (8-PowerSFN, surface mount) | PG-TDSON-8-7 (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| Avalanche Rating | 100% Avalanche Tested | β |
| RoHS Compliance | Yes (Green Product) | β |
| Lead-Free | Yes (100% lead-free) | β |
| Configuration | Single with built-in diode | β |
| Packing | Tape & Reel (TR) | β |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID, Tc=25C) | β | 60 A |
| Continuous Drain Current (ID, Ta) | β | [DATA_NEEDED: ID Ta-rated value] |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max @ VGS=10V | β | 9.8 mOhm |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max +/-] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typ/min/max] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg] |
| Power Dissipation (Tc=25C) | β | 69 W |
| Power Dissipation (Ta) | β | 2.5 W |
| Diode Continuous Forward Current (IS) | β | 63 A (Tc=25C) |
| Diode Pulse Current (IS,pulse) | β | 240 A (Tc=25C) |
| Diode Forward Voltage (VSD) typ | β | 0.9 V (IF=30 A, Tj=25C) |
| Diode Forward Voltage (VSD) max | β | 1.1 V (IF=30 A, Tj=25C) |
| Operating Temperature Range | β | [DATA_NEEDED: Tj min/max] |
| RoHS Status | β | Compliant |
| MSL Level | β | 1 |
| Shipping Packaging | β | Tape & Reel (T/R) |