IPN70R2K0P7SATMA1 vs IPD60R1K0PFD7SAUMA1 对比
详细并排对比 IPN70R2K0P7SATMA1 出自 Infineon 和 IPD60R1K0PFD7SAUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPN70R2K0P7SATMA1 | IPD60R1K0PFD7SAUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.38 | $0.36 |
| Manufacturer | Infineon Technologies | — |
| Part Family | CoolMOS P7 | — |
| Technology | Superjunction (SJ) N-Channel MOSFET | CoolMOS PFD7 Superjunction (SJ) MOSFET |
| Polarity / Channel Type | N-Channel Enhancement Mode | N-Channel Enhancement Mode |
| Drain-Source Voltage (VDS) | 700 V | 600 V |
| Continuous Drain Current (ID, Tc=25°C) | 3 A | — |
| Power Dissipation (PD, Tc=25°C) | 6 W | — |
| On-Resistance (RDS(on)) | 2.0 Ω (max, VGS=10 V) | — |
| Gate Threshold Voltage (VGS(th)) | 3.5 V (typical) | ±20 V (max gate-source) |
| Gate-Source Voltage (VGS max) | ±20 V | — |
| 工作温度范围 | -55 °C to +150 °C | -55C to +150C (TJ) |
| 封装 | PG-SOT223 (3 leads + tab) | PG-TO252-3 (DPAK, 2 leads + tab, SC-63) |
| 安装类型 | Surface Mount | Surface Mount |
| Integrated ESD Diode | Yes | — |
| RoHS 状态 | Compliant (ROHS3) | Compliant |
| MSL 等级 | 1 (per JEDEC J-STD-020) | — |
| Continuous Drain Current (ID) at TC | — | 4.7 A |
| Power Dissipation (PD) at TC | — | 26 W |
| Drain-Source On-Resistance (RDS(on)) | — | 1 Ω @ VGS=10V |
| Gate Charge (QG) | — | 6 nC @ VGS=10V |
| Output Capacitance (Coss) | — | 230 pF @ 400 V |
| Gate Drive Voltage (recommended) | — | 10 V (full enhancement) |
| Series | — | CoolMOS PFD7 consumer / superjunction |