IPN80R4K5P7ATMA1 vs IPN70R1K4P7SATMA1 对比

详细并排对比 IPN80R4K5P7ATMA1 出自 Infineon 和 IPN70R1K4P7SATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPN70R1K4P7SATMA1 IPN70R1K4P7SATMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPN70R1K4P7SATMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPN70R1K4P7SATMA1 ✓ 量产中

规格对比

参数 IPN80R4K5P7ATMA1 IPN70R1K4P7SATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.30 $0.48
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolMOS P7 —
FET Type N-Channel —
Drain-Source Voltage (VDS) 800 V —
Continuous Drain Current (ID, Tc) 1.5 A —
Power Dissipation (Pd, Tc) 6 W —
On-Resistance (RDS(on), VGS=10V) 4.5 ohm max —
封装 PG-SOT223 (surface mount, 3-pin + tab) PG-SOT223 (3-pin + tab, surface mount)
安装类型 Surface Mount Surface Mount
Technology CoolMOS Superjunction (SJ) Superjunction (CoolMOS P7)
Operating Mode Enhancement-mode —
Grade Industrial —
Application Low-power SMPS, flyback converters, LED drivers —
RoHS 状态 Compliant Compliant
Reel / Tape Packaging Tape & Reel (T/R) —
Product Series — CoolMOS P7
晶体管类型 — N-Channel MOSFET
Drain-Source Voltage (V(BR)DSS) — 700 V
Continuous Drain Current (ID) at TC — 4 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Static Drain-Source On-Resistance (RDS(on)) — 1.4 ohm class (per '1K4' suffix)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Power Dissipation (PD) at TC — 6.2 W
工作温度范围 — -55C to +150C (TJ)
Configuration — Single with built-in diode
引脚数量 — 3 (Gate, Drain, Source)
DPAK Footprint Compatible — Yes (drop-in alternative to DPAK per datasheet)
MSL 等级 — 1 (per JEDEC J-STD-020)

数据手册与资源

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