IPP075N15N3GXKSA1 vs IRF150DM115XTMA1 对比
详细并排对比 IPP075N15N3GXKSA1 出自 Infineon 和 IRF150DM115XTMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPP075N15N3GXKSA1 | IRF150DM115XTMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.92 | $2.20 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 3 | — |
| Technology | N-Channel MOSFET (OptiMOS 3) | OptiMOS 5 (N-channel, normal level) |
| Drain-Source Voltage (VDS) | 150 V | 150 V |
| Continuous Drain Current (ID, Tc=25C) | 100 A | — |
| Power Dissipation (PD, Tc=25C) | 300 W | — |
| On-State Resistance (RDS(on) max, VGS=10V) | 7.5 mOhm | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: gate-source voltage absolute max] | — |
| 封装 | PG-TO220-3 (TO-220 through-hole) | DirectFET (double-side cooled, ultra-thin) |
| 安装类型 | Through Hole | Surface Mount |
| 工作温度范围 | [DATA_NEEDED: junction operating temperature range] | [DATA_NEEDED: Tj max] C |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Lead-Free / RoHS | RoHS Compliant | — |
| Ordering Code Suffix | GXKSA1 (Tube pack, RoHS compliant) | — |
| Part Number | — | IRF150DM115XTMA1 |
| Continuous Drain Current (ID) | — | [DATA_NEEDED: ID @ 25C and TC] A |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] mOhm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/range] V |
| Gate Charge (QG) | — | [DATA_NEEDED: total QG @ VGS=10V] nC |
| Avalanche Rated | — | 100% avalanche tested |
| Polarity / Channel Type | — | N-Channel |
| MSL 等级 | — | [DATA_NEEDED: MSL rating] |
| RoHS 状态 | — | Compliant (lead-free per datasheet) |
| Gate Drive Level | — | Normal-level (10 V drive) |