IPP075N15N3GXKSA1 vs IRF150DM115XTMA1 Comparison

Detailed side-by-side comparison of IPP075N15N3GXKSA1 by Infineon and IRF150DM115XTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRF150DM115XTMA1 IRF150DM115XTMA1 - 150V OptiMOS 5 N-FET | Infineon

IRF150DM115XTMA1 - 150V OptiMOS 5 N-FET | Infineon

IRF150DM115XTMA1 ✓ Active

Specification Comparison

Parameter IPP075N15N3GXKSA1 IRF150DM115XTMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 3 —
Technology N-Channel MOSFET (OptiMOS 3) OptiMOS 5 (N-channel, normal level)
Drain-Source Voltage (VDS) 150 V 150 V
Continuous Drain Current (ID, Tc=25C) 100 A —
Power Dissipation (PD, Tc=25C) 300 W —
On-State Resistance (RDS(on) max, VGS=10V) 7.5 mOhm —
Gate-Source Voltage (VGS) [DATA_NEEDED: gate-source voltage absolute max] —
Package PG-TO220-3 (TO-220 through-hole) DirectFET (double-side cooled, ultra-thin)
Mounting Type Through Hole Surface Mount
Operating Temperature Range [DATA_NEEDED: junction operating temperature range] [DATA_NEEDED: Tj max] C
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Lead-Free / RoHS RoHS Compliant —
Ordering Code Suffix GXKSA1 (Tube pack, RoHS compliant) —
Part Number — IRF150DM115XTMA1
Continuous Drain Current (ID) — [DATA_NEEDED: ID @ 25C and TC] A
On-Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) max @ VGS=10V] mOhm
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/range] V
Gate Charge (QG) — [DATA_NEEDED: total QG @ VGS=10V] nC
Avalanche Rated — 100% avalanche tested
Polarity / Channel Type — N-Channel
MSL Level — [DATA_NEEDED: MSL rating]
RoHS Status — Compliant (lead-free per datasheet)
Gate Drive Level — Normal-level (10 V drive)

Datasheets & Resources

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