IPP100N12S305AKSA2 vs BSC014NE2LSIATMA1 对比

详细并排对比 IPP100N12S305AKSA2 出自 Infineon 和 BSC014NE2LSIATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSC014NE2LSIATMA1 BSC014NE2LSIATMA1 - 25V OptiMOS N-Ch MOSFET 100A | Infineon

BSC014NE2LSIATMA1 - 25V OptiMOS N-Ch MOSFET 100A | Infineon

BSC014NE2LSIATMA1 ✓ 量产中

规格对比

参数 IPP100N12S305AKSA2 BSC014NE2LSIATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $3.78 $0.48
Manufacturer Infineon Technologies —
Product Family OptiMOS 5 —
FET Type N-Channel —
Drain-Source Voltage (VDS) 120 V 25 V
Continuous Drain Current (ID, TC=25C) 100 A —
Continuous Drain Current (ID, TC=100C) [DATA_NEEDED: ID at TC=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Maximum Power Dissipation (PD, TC=25C) 300 W —
On-State Resistance R_DS(on) max @ VGS=10V [DATA_NEEDED: R_DS(on) max] —
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th)] —
Gate Charge Qg typ @ VGS=10V [DATA_NEEDED: total gate charge] —
Total Gate Charge Qg [DATA_NEEDED: Qg value] —
Reverse Recovery Charge Qrr [DATA_NEEDED: Qrr value] —
工作温度范围 -55C to +175C (TJ) —
封装 PG-TO220-3-1 (Through Hole) PG-TDSON-8-7 (SuperSO8)
安装类型 Through Hole Surface Mount
引脚数量 3 (Gate, Drain, Source) —
RoHS 状态 Compliant Compliant
MSL 等级 N/A (Through Hole) 1 (per JEDEC J-STD-020)
Avalanche Energy Rated Yes (single-pulse) —
Technology — N-Channel MOSFET (OptiMOS 25V)
Gate-Source Voltage (VGS) — ±20 V
Continuous Drain Current (ID, Ta) — 33 A
Continuous Drain Current (ID, Tc) — [DATA_NEEDED: Tc condition rating]
Pulsed Drain Current (IDM, Tc) — 100 A
On-State Resistance RDS(on) — 1.4 mOhm (typ) at VGS = 10 V
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typ at VGS=10V]
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 74 W
工作结温 — -55 °C to +150 °C
Lead-Free — Yes

数据手册与资源

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