IPP120N08S403AKSA1 vs IPP100N12S305AKSA1 对比

详细并排对比 IPP120N08S403AKSA1 出自 Infineon 和 IPP100N12S305AKSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPP120N08S403AKSA1 IPP120N08S403AKSA1 - 80V 120A N-Ch MOSFET | Infineon OptiMOS

IPP120N08S403AKSA1 - 80V 120A N-Ch MOSFET | Infineon OptiMOS

IPP120N08S403AKSA1 ✓ 量产中
Infineon
IPP100N12S305AKSA1 IPP100N12S305AKSA1 - 120V 100A OptiMOS N-Channel MOSFET | Infineon

IPP100N12S305AKSA1 - 120V 100A OptiMOS N-Channel MOSFET | Infineon

IPP100N12S305AKSA1 ✓ 量产中

规格对比

参数 IPP120N08S403AKSA1 IPP100N12S305AKSA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.15 $2.05
Drain-to-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID, Tc) 120 A —
Pulsed Drain Current (bondwire-limited) 245 A at 25 C —
Maximum Power Dissipation (Ptot) 278 W (Tc) —
On-State Resistance (RDS(on)) 2.8 mOhm typical at VGS=10 V, ID=100 A —
Gate Threshold Voltage (VGS(th)) 4 V max —
Total Gate Charge (Qg) 167 nC —
Input Capacitance (Ciss) 11550 pF —
Thermal Resistance, Junction-to-Case (RthJC) 0.54 K/W —
工作结温 -55 C to +175 C -55 °C to +175 °C
封装 TO-220-3-1 (PG-TO220-3-1) TO-220 (PG-TO220-3-1)
安装类型 Through Hole Through Hole
MSL 等级 MSL1 (peak reflow up to 260 C) —
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
Avalanche Rating 100% avalanche-tested —
RoHS 状态 Compliant (Green Product) —
Channel Type N-Channel enhancement mode —
Technology Family OptiMOS —
晶体管类型 — N-Channel MOSFET
Technology — OptiMOS trench
Drain-Source Voltage (VDS) — 120 V
Continuous Drain Current (ID) at Tc — 100 A
脉冲漏极电流 — [DATA_NEEDED: pulsed ID value]
Maximum Power Dissipation (Ptot) at Tc — 300 W
Gate-Source Voltage (VGS) max — ±20 V
On-Resistance RDS(on) — [DATA_NEEDED: RDS(on) at VGS=10V]
Avalanche Energy, Single Pulse — [DATA_NEEDED: EAS]
引脚数量 — 3
MSL Moisture Sensitivity Level — 1 (260 °C peak reflow)
Avalanche Tested — 100% tested
RoHS Compliance — Compliant (Green product)

数据手册与资源

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