IPP120N08S403AKSA1 vs IPP120N08S4-03 对比

详细并排对比 IPP120N08S403AKSA1 出自 Infineon 和 IPP120N08S4-03 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPP120N08S403AKSA1 IPP120N08S403AKSA1 - 80V 120A N-Ch MOSFET | Infineon OptiMOS

IPP120N08S403AKSA1 - 80V 120A N-Ch MOSFET | Infineon OptiMOS

IPP120N08S403AKSA1 ✓ 量产中

规格对比

参数 IPP120N08S403AKSA1 IPP120N08S4-03
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.15 $1.95
Drain-to-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID, Tc) 120 A —
Pulsed Drain Current (bondwire-limited) 245 A at 25 C —
Maximum Power Dissipation (Ptot) 278 W (Tc) —
On-State Resistance (RDS(on)) 2.8 mOhm typical at VGS=10 V, ID=100 A —
Gate Threshold Voltage (VGS(th)) 4 V max —
Total Gate Charge (Qg) 167 nC —
Input Capacitance (Ciss) 11550 pF —
Thermal Resistance, Junction-to-Case (RthJC) 0.54 K/W —
工作结温 -55 C to +175 C —
封装 TO-220-3-1 (PG-TO220-3-1) TO-220-3 (IPAK) through-hole
安装类型 Through Hole Through-Hole
MSL 等级 MSL1 (peak reflow up to 260 C) MSL1 (peak reflow 260 °C)
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
Avalanche Rating 100% avalanche-tested —
RoHS 状态 Compliant (Green Product) —
Channel Type N-Channel enhancement mode N-channel Enhancement Mode
Technology Family OptiMOS —
Part Number — IPP120N08S4-03
Manufacturer — Infineon Technologies
Family — OptiMOS-T2 Power-Transistor
Drain-Source Voltage VDS max — 80 V
Continuous Drain Current ID — 120 A (bondwire limited)
Silicon-Limited Current — 245 A at TC = 25 °C
On-State Resistance RDS(on) max — 2.5 mΩ at VGS = 10 V
Gate-Source Voltage VGS — ±20 V (max)
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: typical VGS(th)]
Thermal Resistance RthJC — 0.54 K/W
Avalanche Rated — 100 % Avalanche tested
工作温度 — -55 °C to +175 °C
RoHS Compliance — Green Product, RoHS compliant
Orderable Part Number — IPP120N08S403AKSA1

数据手册与资源

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