IPP120N08S403AKSA1 vs IPP120N08S4-03 비교

다음의 상세 나란히 비교: IPP120N08S403AKSA1 제조: Infineon 및 IPP120N08S4-03 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IPP120N08S403AKSA1 IPP120N08S403AKSA1 - 80V 120A N-Ch MOSFET | Infineon OptiMOS

IPP120N08S403AKSA1 - 80V 120A N-Ch MOSFET | Infineon OptiMOS

IPP120N08S403AKSA1 ✓ 활성

사양 비교

파라미터 IPP120N08S403AKSA1 IPP120N08S4-03
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $2.15 $1.95
Drain-to-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID, Tc) 120 A —
Pulsed Drain Current (bondwire-limited) 245 A at 25 C —
Maximum Power Dissipation (Ptot) 278 W (Tc) —
On-State Resistance (RDS(on)) 2.8 mOhm typical at VGS=10 V, ID=100 A —
Gate Threshold Voltage (VGS(th)) 4 V max —
Total Gate Charge (Qg) 167 nC —
Input Capacitance (Ciss) 11550 pF —
Thermal Resistance, Junction-to-Case (RthJC) 0.54 K/W —
동작 접합 온도 -55 C to +175 C —
패키지 TO-220-3-1 (PG-TO220-3-1) TO-220-3 (IPAK) through-hole
실장 유형 Through Hole Through-Hole
MSL 레벨 MSL1 (peak reflow up to 260 C) MSL1 (peak reflow 260 °C)
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
Avalanche Rating 100% avalanche-tested —
RoHS 상태 Compliant (Green Product) —
Channel Type N-Channel enhancement mode N-channel Enhancement Mode
Technology Family OptiMOS —
Part Number — IPP120N08S4-03
Manufacturer — Infineon Technologies
Family — OptiMOS-T2 Power-Transistor
Drain-Source Voltage VDS max — 80 V
Continuous Drain Current ID — 120 A (bondwire limited)
Silicon-Limited Current — 245 A at TC = 25 °C
On-State Resistance RDS(on) max — 2.5 mΩ at VGS = 10 V
Gate-Source Voltage VGS — ±20 V (max)
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: typical VGS(th)]
Thermal Resistance RthJC — 0.54 K/W
Avalanche Rated — 100 % Avalanche tested
동작 온도 — -55 °C to +175 °C
RoHS Compliance — Green Product, RoHS compliant
Orderable Part Number — IPP120N08S403AKSA1

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