IPT012N08N5ATMA1 vs IAUT300N08S5N011ATMA1 对比
详细并排对比 IPT012N08N5ATMA1 出自 Infineon 和 IAUT300N08S5N011ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPT012N08N5ATMA1 | IAUT300N08S5N011ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $4.32 | $5.40 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPT012N08N5ATMA1 | — |
| Technology | OptiMOS 5 | OptiMOS 5 (trench MOSFET) |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 80 V | — |
| Continuous Drain Current (ID, TC) | 300 A | — |
| Pulsed Drain Current (IDM) | 400 A | — |
| On-Resistance RDS(on) Max | 1.2 mOhm | — |
| Total Gate Charge QG | 208 nC | — |
| Gate-to-Drain Charge QGD | 178 nC | — |
| Power Dissipation (PD, TC) | 375 W | — |
| 封装 | PG-HSOF-8 (TOLL) | PG-HSOF-8-1 (TOLL 10x12 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55C to +175C (TJ max) | -55C to +175C |
| RoHS 状态 | Compliant | — |
| Qualification | JEDEC JESD47, JESD22, J-STD-020 (industrial) | Automotive (AEC-Q101) |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 80 V |
| Continuous Drain Current (I_D, T_C=25C) | — | 300 A |
| Pulsed Drain Current (I_DM) | — | 410 A (Tj) |
| R_DS(on) max | — | 1.10 mOhm at V_GS=10 V |
| Gate Threshold Voltage (V_GS(th)) | — | 3.8 V |
| Total Gate Charge (Q_g) | — | 231 nC at V_GS=10 V |
| Input Capacitance (C_iss) | — | 16.25 nF |
| Output Capacitance (C_oss) | — | 2.6 nF |
| Reverse Transfer Capacitance (C_rss) | — | 130 pF |
| Power Dissipation (P_D) | — | 375 W at T_C=25C |
| MSL 等级 | — | 1 |