IPT012N08NF2SATMA1 vs BSC019N08NS5ATMA1 对比
详细并排对比 IPT012N08NF2SATMA1 出自 Infineon 和 BSC019N08NS5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPT012N08NF2SATMA1 | BSC019N08NS5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.74 | $1.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPT012N08NF2SATMA1 | — |
| Product Family | StrongIRFET™ | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 80 V | — |
| Continuous Drain Current (ID) at Ta | 39 A | — |
| Pulsed Drain Current (IDM) at Tc | 351 A | — |
| On-Resistance RDS(on) Typ @ VGS=10V | 1.2 mΩ | — |
| Gate Threshold Voltage (VGS(th)) Max | 3.8 V | — |
| Power Dissipation (PD) at Ta | 3.8 W | — |
| Power Dissipation (PD) at Tc | 300 W | — |
| 工作结温 | -55 °C to +175 °C | — |
| 封装 | PG-HSOF-8-10 (HSOF) | PG-TSON-8-3 (SuperSO8 5x6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| Pin Count (incl. tab) | 9 pins (8+tab) | — |
| Technology | Trench MOSFET (OptiMOS-derived) | OptiMOS 5 (N-channel trench) |
| RoHS 状态 | Compliant | Compliant |
| Packing | Tape & Reel (T/R) | — |
| Polarity | — | N-Channel |
| Drain-Source Voltage (VDS) max | — | 80 V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Continuous Drain Current (ID) at TA=25C | — | 28 A |
| Continuous Drain Current (ID) at TC=25C | — | 237 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) max at VGS=10V | — | 1.9 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | 3.0 V |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation (TA=25C) | — | 3 W |
| Power Dissipation (TC=25C) | — | 214 W |
| 工作温度范围 | — | -55 C to +150 C |
| MSL 等级 | — | 1 |
| Avalanche Rated | — | Yes |