IPT012N08NF2SATMA1 vs BSC019N08NS5ATMA1 Comparison
Detailed side-by-side comparison of IPT012N08NF2SATMA1 by Infineon and BSC019N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPT012N08NF2SATMA1
IPT012N08NF2SATMA1 - 80V, 1.2mΞ© N-Channel MOSFET | Infineon
IPT012N08NF2SATMA1 β ActiveInfineon
BSC019N08NS5ATMA1
BSC019N08NS5ATMA1 - 80V 237A 1.9mOhm OptiMOS 5 MOSFET | Infineon
BSC019N08NS5ATMA1 β ActiveSpecification Comparison
| Parameter | IPT012N08NF2SATMA1 | BSC019N08NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.74 | $1.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPT012N08NF2SATMA1 | β |
| Product Family | StrongIRFETβ’ | β |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) Max | 80 V | β |
| Continuous Drain Current (ID) at Ta | 39 A | β |
| Pulsed Drain Current (IDM) at Tc | 351 A | β |
| On-Resistance RDS(on) Typ @ VGS=10V | 1.2 mΞ© | β |
| Gate Threshold Voltage (VGS(th)) Max | 3.8 V | β |
| Power Dissipation (PD) at Ta | 3.8 W | β |
| Power Dissipation (PD) at Tc | 300 W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-HSOF-8-10 (HSOF) | PG-TSON-8-3 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count (incl. tab) | 9 pins (8+tab) | β |
| Technology | Trench MOSFET (OptiMOS-derived) | OptiMOS 5 (N-channel trench) |
| RoHS Status | Compliant | Compliant |
| Packing | Tape & Reel (T/R) | β |
| Polarity | β | N-Channel |
| Drain-Source Voltage (VDS) max | β | 80 V |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Continuous Drain Current (ID) at TA=25C | β | 28 A |
| Continuous Drain Current (ID) at TC=25C | β | 237 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) max at VGS=10V | β | 1.9 mOhm |
| Gate Threshold Voltage VGS(th) typ | β | 3.0 V |
| Total Gate Charge Qg | β | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation (TA=25C) | β | 3 W |
| Power Dissipation (TC=25C) | β | 214 W |
| Operating Temperature Range | β | -55 C to +150 C |
| MSL Level | β | 1 |
| Avalanche Rated | β | Yes |