IPTC017N12NM6ATMA1 vs ISZ230N10NM6ATMA1 对比
详细并排对比 IPTC017N12NM6ATMA1 出自 Infineon 和 ISZ230N10NM6ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPTC017N12NM6ATMA1 | ISZ230N10NM6ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.95 | $0.71 |
| Technology | OptiMOS 6, N-channel trench MOSFET | OptiMOS 6 trench MOSFET |
| Drain-Source Voltage (VDS) | 120 V | 100 V |
| Continuous Drain Current (ID, Ta) | 32 A | — |
| Continuous Drain Current (ID, Tc) | 331 A | — |
| On-State Resistance RDS(on) max | 1.7 mΩ at VGS = 10 V | — |
| Gate-Source Threshold VGS(th) | 2.4 V (typ) | — |
| Total Gate Charge QG | 141 nC at VGS = 10 V | — |
| Input Capacitance Ciss | 2.4 nF at VDS = 60 V | — |
| Output Capacitance Coss | 11000 pF at VDS = 60 V | — |
| Power Dissipation (Ta) | 3.8 W | 3 W |
| Power Dissipation (Tc) | 395 W | 48 W |
| 封装 | PG-HDSOP-16 (Surface Mount) | PG-TSDSON-8 FL (3.3 x 3.3 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | -55 °C to +175 °C (TJ max) | — |
| Gate Drive Voltage (recommended) | 10 V | 10 V |
| RoHS 状态 | Compliant | Compliant |
| Polarity / Channel Type | — | N-Channel |
| Continuous Drain Current (Ta) | — | 7.7 A |
| Continuous Drain Current (Tc) | — | 31 A |
| On-Resistance RDS(on) at VGS=10V | — | 23 mΩ (typ, ID=10A) |
| Gate Threshold Voltage VGS(th) | — | 3.3 V (typ at 13 µA) |
| 工作温度范围 | — | -55 °C to +150 °C (junction) |
| MSL 等级 | — | MSL1 (per JEDEC J-STD-020) |
| Family | — | OptiMOS 6 (100V class) |