IPTG025N15NM6ATMA1 vs ISC016N08NM8ATMA1 对比

详细并排对比 IPTG025N15NM6ATMA1 出自 Infineon 和 ISC016N08NM8ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPTG025N15NM6ATMA1 IPTG025N15NM6ATMA1 - 150V OptiMOS 6 N-Channel MOSFET | Infineon

IPTG025N15NM6ATMA1 - 150V OptiMOS 6 N-Channel MOSFET | Infineon

IPTG025N15NM6ATMA1 ✓ 量产中
Infineon
ISC016N08NM8ATMA1 ISC016N08NM8ATMA1 - 80V N-Ch OptiMOS 8 MOSFET | Infineon

ISC016N08NM8ATMA1 - 80V N-Ch OptiMOS 8 MOSFET | Infineon

ISC016N08NM8ATMA1 ✓ 量产中

规格对比

参数 IPTG025N15NM6ATMA1 ISC016N08NM8ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.52 $1.02
Manufacturer Infineon Technologies Infineon Technologies
Technology OptiMOS 6 150 V (N-channel trench) Trench-gate OptiMOS 8 (silicon)
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 150 V —
Continuous Drain Current (ID) at TA=25C 26 A —
Continuous Drain Current (ID) at TC=25C 264 A (pulsed) —
Power Dissipation (PD) at TA=25C 3.8 W —
Power Dissipation (PD) at TC=25C 395 W —
On-State Resistance RDS(on) typ 2.5 mOhm at VGS=10 V —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) value] [DATA_NEEDED: gate threshold voltage]
Total Gate Charge Qg typ [DATA_NEEDED: Qg value] [DATA_NEEDED: total gate charge]
封装 PG-HSOG-8-1 (TOLG) SuperSO8 / PG-TDSON-8 (5.0 x 6.0 mm)
安装类型 Surface Mount Surface Mount
工作温度范围 -55 C to +175 C (typical for OptiMOS 6) -55 C to +150 C (junction)
RoHS 状态 Compliant Compliant
MSL (Moisture Sensitivity Level) MSL1 (per JEDEC J-STD-020) —
Solder Joint Reliability Excellent - 30% smaller footprint than D2PAK —
Product Series — OptiMOS 8
Channel Type — N-Channel
Drain-Source Voltage (VDS max) — 80 V
Gate-Source Voltage (VGS max) — +/-20 V (typical rating)
Continuous Drain Current (ID) at Ta — 29 A
Continuous Drain Current (ID) at Tc — [DATA_NEEDED: pulsed/continuous current rating at Tc]
Pulsed Drain Current (IDM) at Tc — 268 A
Power Dissipation (PD) at Ta — 3 W
Power Dissipation (PD) at Tc — 263 W
On-State Resistance RDS(on) typ @ VGS=10V — 1.6 mOhm
Lead-Free / Halogen-Free — Lead-free (per Infineon product page)
MSL 等级 — 1 (per JEDEC J-STD-020E classification for SuperSO8)

数据手册与资源

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