IPTG025N15NM6ATMA1 vs ISC016N08NM8ATMA1 Comparison
Detailed side-by-side comparison of IPTG025N15NM6ATMA1 by Infineon and ISC016N08NM8ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPTG025N15NM6ATMA1 - 150V OptiMOS 6 N-Channel MOSFET | Infineon
IPTG025N15NM6ATMA1 β Active
Specification Comparison
| Parameter | IPTG025N15NM6ATMA1 | ISC016N08NM8ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.52 | $1.02 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 6 150 V (N-channel trench) | Trench-gate OptiMOS 8 (silicon) |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 150 V | β |
| Continuous Drain Current (ID) at TA=25C | 26 A | β |
| Continuous Drain Current (ID) at TC=25C | 264 A (pulsed) | β |
| Power Dissipation (PD) at TA=25C | 3.8 W | β |
| Power Dissipation (PD) at TC=25C | 395 W | β |
| On-State Resistance RDS(on) typ | 2.5 mOhm at VGS=10 V | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) value] | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg value] | [DATA_NEEDED: total gate charge] |
| Package | PG-HSOG-8-1 (TOLG) | SuperSO8 / PG-TDSON-8 (5.0 x 6.0 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 C to +175 C (typical for OptiMOS 6) | -55 C to +150 C (junction) |
| RoHS Status | Compliant | Compliant |
| MSL (Moisture Sensitivity Level) | MSL1 (per JEDEC J-STD-020) | β |
| Solder Joint Reliability | Excellent - 30% smaller footprint than D2PAK | β |
| Product Series | β | OptiMOS 8 |
| Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS max) | β | 80 V |
| Gate-Source Voltage (VGS max) | β | +/-20 V (typical rating) |
| Continuous Drain Current (ID) at Ta | β | 29 A |
| Continuous Drain Current (ID) at Tc | β | [DATA_NEEDED: pulsed/continuous current rating at Tc] |
| Pulsed Drain Current (IDM) at Tc | β | 268 A |
| Power Dissipation (PD) at Ta | β | 3 W |
| Power Dissipation (PD) at Tc | β | 263 W |
| On-State Resistance RDS(on) typ @ VGS=10V | β | 1.6 mOhm |
| Lead-Free / Halogen-Free | β | Lead-free (per Infineon product page) |
| MSL Level | β | 1 (per JEDEC J-STD-020E classification for SuperSO8) |