IPW60R037P7XKSA1 vs IPL60R065C7AUMA1 对比

详细并排对比 IPW60R037P7XKSA1 出自 Infineon 和 IPL60R065C7AUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPW60R037P7XKSA1 IPW60R037P7XKSA1 - 600V 76A CoolMOS P7 MOSFET | Infineon

IPW60R037P7XKSA1 - 600V 76A CoolMOS P7 MOSFET | Infineon

IPW60R037P7XKSA1 ✓ 量产中
Infineon
IPL60R065C7AUMA1 IPL60R065C7AUMA1 - 600V CoolMOS C7 65mΩ N-Ch MOSFET | Infineon

IPL60R065C7AUMA1 - 600V CoolMOS C7 65mΩ N-Ch MOSFET | Infineon

IPL60R065C7AUMA1 ✓ 量产中

规格对比

参数 IPW60R037P7XKSA1 IPL60R065C7AUMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $3.55 $2.95
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS™ P7 CoolMOS C7
晶体管类型 N-Channel MOSFET (Superjunction) —
Drain-Source Voltage (V_DSS) 600 V —
Continuous Drain Current (I_D, Tc=25 °C) 76 A —
On-Resistance (R_DS(on), max, V_GS=10 V) 37 mΩ —
Power Dissipation (P_D, Tc=25 °C) 255 W —
Gate Threshold Voltage (V_GS(th), typ) 3.5 V —
封装 PG-TO247-3 (TO-247-3, through-hole) —
安装类型 Through Hole Surface Mount
工作结温 -55 °C to +150 °C —
Technology CoolMOS Superjunction (SJ) —
Orderable Part Number Suffix XKSA1 (tube packaging, industrial) —
RoHS 状态 Compliant Compliant with Exemption
Avalanche Rated Yes —
Part Status — Active
FET Type — N-Channel
Process Technology — CoolMOS C7 (Superjunction)
Maximum Drain-Source Voltage (V_DS) — 600 V
Continuous Drain Current (I_D, T_C=25°C) — 29 A
On-Resistance (R_DS(on), typ., V_GS=10V) — 65 mΩ
Maximum Power Dissipation (P_D, T_C=25°C) — 180 W
Gate-Source Voltage (V_GS, max) — ±20 V
Gate-Source Threshold (V_GS(th), typ.) — 3.5 V
封装 / 外壳 — PG-VSON-4-1 (Source-Down)
工作温度范围 — -55 °C to +150 °C (T_J)
Automotive Qualified (AEC-Q101) — No
Total Gate Charge (Q_G, typ.) — [DATA_NEEDED: Q_G typ. value]
Output Capacitance Stored Energy (E_OSS) — [DATA_NEEDED: E_OSS typ. value]

数据手册与资源

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