IPW60R037P7XKSA1 vs IPL60R115CFD7AUMA1 对比

详细并排对比 IPW60R037P7XKSA1 出自 Infineon 和 IPL60R115CFD7AUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPW60R037P7XKSA1 IPW60R037P7XKSA1 - 600V 76A CoolMOS P7 MOSFET | Infineon

IPW60R037P7XKSA1 - 600V 76A CoolMOS P7 MOSFET | Infineon

IPW60R037P7XKSA1 ✓ 量产中
Infineon
IPL60R115CFD7AUMA1 IPL60R115CFD7AUMA1 - 600V 22A CoolMOS CFD7 MOSFET | Infineon

IPL60R115CFD7AUMA1 - 600V 22A CoolMOS CFD7 MOSFET | Infineon

IPL60R115CFD7AUMA1 ✓ 量产中

规格对比

参数 IPW60R037P7XKSA1 IPL60R115CFD7AUMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $3.55 $1.65
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS™ P7 CoolMOS CFD7
晶体管类型 N-Channel MOSFET (Superjunction) —
Drain-Source Voltage (V_DSS) 600 V —
Continuous Drain Current (I_D, Tc=25 °C) 76 A —
On-Resistance (R_DS(on), max, V_GS=10 V) 37 mΩ —
Power Dissipation (P_D, Tc=25 °C) 255 W —
Gate Threshold Voltage (V_GS(th), typ) 3.5 V —
封装 PG-TO247-3 (TO-247-3, through-hole) —
安装类型 Through Hole Surface Mount
工作结温 -55 °C to +150 °C —
Technology CoolMOS Superjunction (SJ) Superjunction MOSFET (CoolMOS CFD7)
Orderable Part Number Suffix XKSA1 (tube packaging, industrial) —
RoHS 状态 Compliant Compliant (per distributor listings)
Avalanche Rated Yes —
Part Number — IPL60R115CFD7AUMA1
FET Type — N-Channel
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID, Tc) — 22 A
On-Resistance (RDS(on)) — 115 mOhm (typ, VGS=10V)
封装 / 外壳 — PG-VSON-4 (5x6 mm) with exposed pad
Integrated Body Diode — Yes - fast body diode (CFD)
Application — Resonant high-power topologies (LLC, PFC)
工作温度范围 — [DATA_NEEDED: operating temperature range]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) value]
引脚数量 — 4
Quantity per Reel — [DATA_NEEDED: reel qty]

数据手册与资源

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