IPW60R037P7XKSA1 vs IPT65R040CFD7XTMA1 对比

详细并排对比 IPW60R037P7XKSA1 出自 Infineon 和 IPT65R040CFD7XTMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPW60R037P7XKSA1 IPW60R037P7XKSA1 - 600V 76A CoolMOS P7 MOSFET | Infineon

IPW60R037P7XKSA1 - 600V 76A CoolMOS P7 MOSFET | Infineon

IPW60R037P7XKSA1 ✓ 量产中
Infineon
IPT65R040CFD7XTMA1 IPT65R040CFD7XTMA1 - 650V 34mOhm CoolMOS CFD7 MOSFET | Infineon

IPT65R040CFD7XTMA1 - 650V 34mOhm CoolMOS CFD7 MOSFET | Infineon

IPT65R040CFD7XTMA1 ✓ 量产中

规格对比

参数 IPW60R037P7XKSA1 IPT65R040CFD7XTMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $3.55 $3.95
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS™ P7 —
晶体管类型 N-Channel MOSFET (Superjunction) —
Drain-Source Voltage (V_DSS) 600 V —
Continuous Drain Current (I_D, Tc=25 °C) 76 A —
On-Resistance (R_DS(on), max, V_GS=10 V) 37 mΩ —
Power Dissipation (P_D, Tc=25 °C) 255 W —
Gate Threshold Voltage (V_GS(th), typ) 3.5 V —
封装 PG-TO247-3 (TO-247-3, through-hole) PG-HSOF-8-2 (8-HSOF, surface mount, top-side exposed tab)
安装类型 Through Hole Surface Mount
工作结温 -55 °C to +150 °C —
Technology CoolMOS Superjunction (SJ) Superjunction N-channel MOSFET
Orderable Part Number Suffix XKSA1 (tube packaging, industrial) —
RoHS 状态 Compliant —
Avalanche Rated Yes —
Part Family — CoolMOS CFD7
Drain-Source Voltage (V(BR)DSS) — 650 V
Maximum On-State Resistance RDS(on) max — 40 mOhm at VGS=10 V
Typical On-State Resistance RDS(on) typ — 34 mOhm
Continuous Drain Current ID (TC=25C) — 63 A
Gate Threshold Voltage VGS(th) — 3.5 V typical [DATA_NEEDED: full min/max]
Gate-Source Voltage VGS max — [DATA_NEEDED: +/-20 V typical for CFD7]
Topology Suitability — LLC, Phase-Shift Full-Bridge, ZVS totem-pole PFC
Body Diode — Integrated fast body diode (low Qrr, hard-commutation rugged)
工作温度范围 — -55C to +150C [DATA_NEEDED: confirm junction range]
RoHS Compliance — Compliant
MSL 等级 — [DATA_NEEDED: per JEDEC J-STD-020, not in provided snippets]
Automotive Qualification — Industrial grade (AEC-Q101 variants exist separately)

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