IPW60R037P7XKSA1 vs IPT65R040CFD7XTMA1 비교

다음의 상세 나란히 비교: IPW60R037P7XKSA1 제조: Infineon 및 IPT65R040CFD7XTMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IPW60R037P7XKSA1 IPW60R037P7XKSA1 - 600V 76A CoolMOS P7 MOSFET | Infineon

IPW60R037P7XKSA1 - 600V 76A CoolMOS P7 MOSFET | Infineon

IPW60R037P7XKSA1 ✓ 활성

사양 비교

파라미터 IPW60R037P7XKSA1 IPT65R040CFD7XTMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $3.55 $3.95
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS™ P7 —
트랜지스터 유형 N-Channel MOSFET (Superjunction) —
Drain-Source Voltage (V_DSS) 600 V —
Continuous Drain Current (I_D, Tc=25 °C) 76 A —
On-Resistance (R_DS(on), max, V_GS=10 V) 37 mΩ —
Power Dissipation (P_D, Tc=25 °C) 255 W —
Gate Threshold Voltage (V_GS(th), typ) 3.5 V —
패키지 PG-TO247-3 (TO-247-3, through-hole) PG-HSOF-8-2 (8-HSOF, surface mount, top-side exposed tab)
실장 유형 Through Hole Surface Mount
동작 접합 온도 -55 °C to +150 °C —
Technology CoolMOS Superjunction (SJ) Superjunction N-channel MOSFET
Orderable Part Number Suffix XKSA1 (tube packaging, industrial) —
RoHS 상태 Compliant —
Avalanche Rated Yes —
Part Family — CoolMOS CFD7
Drain-Source Voltage (V(BR)DSS) — 650 V
Maximum On-State Resistance RDS(on) max — 40 mOhm at VGS=10 V
Typical On-State Resistance RDS(on) typ — 34 mOhm
Continuous Drain Current ID (TC=25C) — 63 A
Gate Threshold Voltage VGS(th) — 3.5 V typical [DATA_NEEDED: full min/max]
Gate-Source Voltage VGS max — [DATA_NEEDED: +/-20 V typical for CFD7]
Topology Suitability — LLC, Phase-Shift Full-Bridge, ZVS totem-pole PFC
Body Diode — Integrated fast body diode (low Qrr, hard-commutation rugged)
동작 온도 범위 — -55C to +150C [DATA_NEEDED: confirm junction range]
RoHS Compliance — Compliant
MSL 레벨 — [DATA_NEEDED: per JEDEC J-STD-020, not in provided snippets]
Automotive Qualification — Industrial grade (AEC-Q101 variants exist separately)

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