IQD005N04NM6CGATMA1 vs BSC093N15NS5ATMA1 对比
详细并排对比 IQD005N04NM6CGATMA1 出自 Infineon 和 BSC093N15NS5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IQD005N04NM6CGATMA1 | BSC093N15NS5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.62 | $1.83 |
| FET Type | N-Channel | N-Channel |
| Technology | OptiMOS 6 (trench FET) | OptiMOS 5 150V |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Gate-to-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| RDS(on) Typical | 0.5 mΩ | — |
| Continuous Drain Current (ID) at Ta | 58 A | — |
| Continuous Drain Current (ID) at Tc | 610 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed rating] | — |
| Power Dissipation at Ta | 3 W | — |
| Power Dissipation at Tc | 333 W | — |
| 工作温度范围 | -55 °C to +150 °C (TJ) | [DATA_NEEDED: operating temperature range] |
| 封装 | PG-TTFN-9-U02 (Source-Down 5x6 mm²) | SuperSO8 5x6 (PG-TDSON-8-7) |
| 安装类型 | Surface Mount | Surface Mount |
| 引脚数量 | 9 | — |
| MSL 等级 | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Source Configuration | Source-Down (bottom-side source for PCB heatsinking) | — |
| Manufacturer | — | Infineon Technologies |
| Drain-Source Voltage (VDS) Max | — | 150 V |
| Continuous Drain Current (ID) at TC | — | 87 A |
| Drain-Source On-Resistance (RDS(on)) Max at VGS=10V | — | 9.3 mΩ |
| Power Dissipation (PD) at TC | — | 139 W |
| Gate Drive Voltage (VGS) Recommended | — | 10 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge Qg] |
| 无卤 | — | [DATA_NEEDED: halogen free status] |