IQDH29NE2LM5CGSCATMA1 vs IQEH68NE2LM7UCGATMA1 对比
详细并排对比 IQDH29NE2LM5CGSCATMA1 出自 Infineon 和 IQEH68NE2LM7UCGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IQDH29NE2LM5CGSCATMA1 | IQEH68NE2LM7UCGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.84 | $1.35 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 Power-Transistor | OptiMOS 7 trench MOSFET |
| Drain-Source Voltage (VDS) | 25 V | 25 V |
| Continuous Drain Current (Ta) | 75 A | — |
| Continuous Drain Current (Tc) | 789 A | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 278 W | — |
| Maximum On-Resistance RDS(on) | 0.29 mΩ | — |
| Gate Threshold Voltage VGS(th) | 2 V (typ) | — |
| 封装 | PG-WHTFN-9-U02 (WHTFN EP) | PG-TTFN-9-3 (surface mount) |
| 引脚数量 | 9 | — |
| 安装类型 | Surface Mount | Surface Mount |
| Cooling | Dual-side exposed pad (top + bottom) | — |
| MSL 等级 | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL Level] |
| RoHS 状态 | Compliant | Compliant (per distributor listing) |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 7 |
| 晶体管类型 | — | N-Channel MOSFET |
| Continuous Drain Current (ID) @ Ta | — | 47 A |
| Pulsed Drain Current (IDM) @ Tc | — | 338 A |
| Power Dissipation (PD) @ Ta | — | 2.5 W |
| Power Dissipation (PD) @ Tc | — | 130 W |
| Gate Threshold Voltage Type | — | Logic-level (per OptiMOS 7 family) |
| On-Resistance Family | — | RDS(on)10 / RDS(on)45 (10V and 4.5V rated) |
| Maximum Junction Temperature | — | 175 °C |
| 工作温度范围 | — | -55 °C to +175 °C (typical for OptiMOS 7) |
| Packaging | — | Tape & Reel (per ATMA1 suffix) |