IQDH29NE2LM5CGSCATMA1 vs IQEH68NE2LM7UCGATMA1 Comparison

Detailed side-by-side comparison of IQDH29NE2LM5CGSCATMA1 by Infineon and IQEH68NE2LM7UCGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQDH29NE2LM5CGSCATMA1

IQDH29NE2LM5CGSCATMA1 - 25V N-Ch 0.29mΞ© MOSFET | Infineon

IQDH29NE2LM5CGSCATMA1 βœ“ Active
Infineon
IQEH68NE2LM7UCGATMA1

IQEH68NE2LM7UCGATMA1 - 25V OptiMOS 7 N-MOSFET, 338A | Infineon

IQEH68NE2LM7UCGATMA1 βœ“ Active

Specification Comparison

Parameter IQDH29NE2LM5CGSCATMA1 IQEH68NE2LM7UCGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.84 $1.35
FET Type N-Channel β€”
Technology OptiMOS 5 Power-Transistor OptiMOS 7 trench MOSFET
Drain-Source Voltage (VDS) 25 V 25 V
Continuous Drain Current (Ta) 75 A β€”
Continuous Drain Current (Tc) 789 A β€”
Power Dissipation (Ta) 2.5 W β€”
Power Dissipation (Tc) 278 W β€”
Maximum On-Resistance RDS(on) 0.29 mΞ© β€”
Gate Threshold Voltage VGS(th) 2 V (typ) β€”
Package PG-WHTFN-9-U02 (WHTFN EP) PG-TTFN-9-3 (surface mount)
Pin Count 9 β€”
Mounting Type Surface Mount Surface Mount
Cooling Dual-side exposed pad (top + bottom) β€”
MSL Level [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL Level]
RoHS Status Compliant Compliant (per distributor listing)
Manufacturer β€” Infineon Technologies
Series β€” OptiMOS 7
Transistor Type β€” N-Channel MOSFET
Continuous Drain Current (ID) @ Ta β€” 47 A
Pulsed Drain Current (IDM) @ Tc β€” 338 A
Power Dissipation (PD) @ Ta β€” 2.5 W
Power Dissipation (PD) @ Tc β€” 130 W
Gate Threshold Voltage Type β€” Logic-level (per OptiMOS 7 family)
On-Resistance Family β€” RDS(on)10 / RDS(on)45 (10V and 4.5V rated)
Maximum Junction Temperature β€” 175 Β°C
Operating Temperature Range β€” -55 Β°C to +175 Β°C (typical for OptiMOS 7)
Packaging β€” Tape & Reel (per ATMA1 suffix)

Datasheets & Resources

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