IQE008N03LM5CGATMA1 vs IQE018N06NM6CGATMA1 对比

详细并排对比 IQE008N03LM5CGATMA1 出自 Infineon 和 IQE018N06NM6CGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IQE018N06NM6CGATMA1 IQE018N06NM6CGATMA1 - 60V 178A OptiMOS 6 N-MOSFET | Infineon

IQE018N06NM6CGATMA1 - 60V 178A OptiMOS 6 N-MOSFET | Infineon

IQE018N06NM6CGATMA1 ✓ 量产中

规格对比

参数 IQE008N03LM5CGATMA1 IQE018N06NM6CGATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.74 $1.21
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 OptiMOS 6 60V
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at Ta=25C 27 A —
Continuous Drain Current (ID) at Tc=25C 253 A —
On-Resistance (RDS(on)) at VGS=10V 0.85 mOhm (typ) @ 20 A —
Gate-Source Voltage (VGS) Max +/-16 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] —
Total Gate Charge (Qg) at VGS=10V 64 nC (typ) —
Input Capacitance (Ciss) at VDS=15V 5700 pF (typ) —
Output Capacitance (Coss) [DATA_NEEDED: Coss typical] —
Reverse Transfer Capacitance (Crss) [DATA_NEEDED: Crss typical] —
Power Dissipation (PD) at Ta=25C 2.1 W —
Power Dissipation (PD) at Tc=25C 89 W —
工作温度范围 -55C to +150C (junction) -55C to +175C (junction)
封装 PG-TTFN-9-1 (8-PowerTDFN) with wettable flanks PG-TTFN-9-3 (TOLL/TTFN)
安装类型 Surface Mount Surface Mount
Lead-Free / RoHS Yes (compliant per Infineon product page) —
AEC-Q100 Automotive [DATA_NEEDED: AEC-Q100 qualification status] —
Channel Type — N-Channel
Drain-Source Voltage (V_DS) — 60 V
Continuous Drain Current (I_D, Tc) — 178 A
Continuous Drain Current (I_D, Ta) — 25 A
R_DS(on) max (V_GS=10 V) — 1.8 mΩ
Gate Threshold Voltage (V_GS(th)) — 3.3 V (logic-level compatible)
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 125 W
Technology — Trench MOSFET, OptiMOS 6
RoHS Compliance — Compliant

数据手册与资源

浏览全部产品 创建 BOM 获取报价