IQE008N03LM5CGATMA1 vs IQE018N06NM6CGATMA1 비교

다음의 상세 나란히 비교: IQE008N03LM5CGATMA1 제조: Infineon 및 IQE018N06NM6CGATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IQE018N06NM6CGATMA1 IQE018N06NM6CGATMA1 - 60V 178A OptiMOS 6 N-MOSFET | Infineon

IQE018N06NM6CGATMA1 - 60V 178A OptiMOS 6 N-MOSFET | Infineon

IQE018N06NM6CGATMA1 ✓ 활성

사양 비교

파라미터 IQE008N03LM5CGATMA1 IQE018N06NM6CGATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.74 $1.21
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 OptiMOS 6 60V
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at Ta=25C 27 A —
Continuous Drain Current (ID) at Tc=25C 253 A —
On-Resistance (RDS(on)) at VGS=10V 0.85 mOhm (typ) @ 20 A —
Gate-Source Voltage (VGS) Max +/-16 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] —
Total Gate Charge (Qg) at VGS=10V 64 nC (typ) —
Input Capacitance (Ciss) at VDS=15V 5700 pF (typ) —
Output Capacitance (Coss) [DATA_NEEDED: Coss typical] —
Reverse Transfer Capacitance (Crss) [DATA_NEEDED: Crss typical] —
Power Dissipation (PD) at Ta=25C 2.1 W —
Power Dissipation (PD) at Tc=25C 89 W —
동작 온도 범위 -55C to +150C (junction) -55C to +175C (junction)
패키지 PG-TTFN-9-1 (8-PowerTDFN) with wettable flanks PG-TTFN-9-3 (TOLL/TTFN)
실장 유형 Surface Mount Surface Mount
Lead-Free / RoHS Yes (compliant per Infineon product page) —
AEC-Q100 Automotive [DATA_NEEDED: AEC-Q100 qualification status] —
Channel Type — N-Channel
Drain-Source Voltage (V_DS) — 60 V
Continuous Drain Current (I_D, Tc) — 178 A
Continuous Drain Current (I_D, Ta) — 25 A
R_DS(on) max (V_GS=10 V) — 1.8 mΩ
Gate Threshold Voltage (V_GS(th)) — 3.3 V (logic-level compatible)
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 125 W
Technology — Trench MOSFET, OptiMOS 6
RoHS Compliance — Compliant

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