IQE018N06NM6CGATMA1 vs IQE018N06NM6SCATMA1 对比
详细并排对比 IQE018N06NM6CGATMA1 出自 Infineon 和 IQE018N06NM6SCATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IQE018N06NM6CGATMA1 | IQE018N06NM6SCATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.21 | $0.98 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 60V | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 60 V | — |
| Continuous Drain Current (I_D, Tc) | 178 A | — |
| Continuous Drain Current (I_D, Ta) | 25 A | — |
| R_DS(on) max (V_GS=10 V) | 1.8 mΩ | — |
| Gate Threshold Voltage (V_GS(th)) | 3.3 V (logic-level compatible) | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 125 W | — |
| 封装 | PG-TTFN-9-3 (TOLL/TTFN) | PG-WHSON-8-1 (5x6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55C to +175C (junction) | -55 °C to +175 °C (TJ) |
| Technology | Trench MOSFET, OptiMOS 6 | — |
| RoHS Compliance | Compliant | — |
| Part Family | — | OptiMOS 6 60 V |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 60 V |
| Continuous Drain Current (ID) at TA=25°C | — | 25 A |
| Continuous Drain Current (ID) at TC | — | 178 A |
| On-Resistance RDS(on) Max | — | 1.8 mΩ at VGS=10 V |
| Gate Threshold Voltage VGS(th) Typ | — | 3.3 V |
| Power Dissipation (TA) | — | 2.5 W |
| Power Dissipation (TC) | — | 125 W |
| RoHS 状态 | — | Compliant |
| Lead-Free | — | Yes |