IQE036N08NM6CGATMA1 vs IQE018N06NM6CGATMA1 对比
详细并排对比 IQE036N08NM6CGATMA1 出自 Infineon 和 IQE018N06NM6CGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IQE036N08NM6CGATMA1 | IQE018N06NM6CGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.82 | $1.21 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 | OptiMOS 6 60V |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-Source Voltage (Vds) | 80 V | — |
| Gate-Source Voltage (Vgs) | [DATA_NEEDED: Vgs max] | — |
| Continuous Drain Current (Id) at Tc | 118 A | — |
| Continuous Drain Current (Id) at Ta | 16.7 A | — |
| Rds(on) max at Vgs=10V | 3.6 mOhm | — |
| Gate Threshold Voltage (Vgs(th)) | 3.5 V (max) | — |
| Power Dissipation at Tc | 125 W | — |
| Power Dissipation at Ta | 2.5 W | — |
| 工作温度范围 | -55 C to +175 C (junction, Tj) | -55C to +175C (junction) |
| 封装 | PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm) | PG-TTFN-9-3 (TOLL/TTFN) |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | MSL1 (per JEDEC J-STD-020) | — |
| RoHS 状态 | Compliant | — |
| Technology | Trench MOSFET, OptiMOS 6 | Trench MOSFET, OptiMOS 6 |
| Configuration | Single N-channel, Source-Down | — |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 60 V |
| Continuous Drain Current (I_D, Tc) | — | 178 A |
| Continuous Drain Current (I_D, Ta) | — | 25 A |
| R_DS(on) max (V_GS=10 V) | — | 1.8 mΩ |
| Gate Threshold Voltage (V_GS(th)) | — | 3.3 V (logic-level compatible) |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 125 W |
| RoHS Compliance | — | Compliant |