IQE036N08NM6CGSCATMA1 vs IQE020N04LM6CGATMA1 对比
详细并排对比 IQE036N08NM6CGSCATMA1 出自 Infineon 和 IQE020N04LM6CGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IQE036N08NM6CGSCATMA1 | IQE020N04LM6CGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.88 | $1.75 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 | OptiMOS 6 |
| Part Status | Active | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | 40 V |
| Continuous Drain Current (ID) at TA | 16.7 A | — |
| Continuous Drain Current (ID) at TC | 118 A | — |
| Power Dissipation (PD) at TA | 2.5 W | — |
| Power Dissipation (PD) at TC | 125 W | — |
| 安装类型 | Surface Mount | Surface Mount |
| 封装 / 外壳 | PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm) | — |
| Technology | Trench MOSFET (OptiMOS 6) | OptiMOS 6, TrenchFET-class |
| Configuration | Source Down, Center Gate, Dual-Side Cooling | Single N-Channel, source-down |
| 工作温度范围 | -55 C to +150 C (junction, per datasheet derating curves) | -55°C to +150°C |
| Packing | Tape and Reel (suffix ATMA1) | — |
| Voltage Rating | 60 V to 100 V category (80 V nominal) | — |
| RoHS 状态 | Compliant | Compliant |
| 晶体管类型 | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA=25°C | — | 25 A |
| Continuous Drain Current (ID) at TC=25°C | — | 166 A |
| Power Dissipation (PD) at TA=25°C | — | 2.5 W |
| Power Dissipation (PD) at TC=25°C | — | 107 W |
| On-State Resistance (RDS(on)) typical @ VGS=10V | — | 2.0 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Gate Charge (Qg) typical | — | [DATA_NEEDED: Qg value] |
| 封装 | — | PG-TTFN-9-3 (PQFN 3.3x3.3, source-down center-gate) |
| MSL 等级 | — | MSL1 (per JEDEC J-STD-020) |