IQE036N08NM6CGSCATMA1 vs IQE065N10NM5CGSCATMA1 对比
详细并排对比 IQE036N08NM6CGSCATMA1 出自 Infineon 和 IQE065N10NM5CGSCATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IQE036N08NM6CGSCATMA1 | IQE065N10NM5CGSCATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.88 | $1.28 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 | OptiMOS 5 |
| Part Status | Active | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at TA | 16.7 A | 13 A |
| Continuous Drain Current (ID) at TC | 118 A | — |
| Power Dissipation (PD) at TA | 2.5 W | — |
| Power Dissipation (PD) at TC | 125 W | — |
| 安装类型 | Surface Mount | Surface Mount |
| 封装 / 外壳 | PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm) | — |
| Technology | Trench MOSFET (OptiMOS 6) | OptiMOS 5 trench-gate |
| Configuration | Source Down, Center Gate, Dual-Side Cooling | — |
| 工作温度范围 | -55 C to +150 C (junction, per datasheet derating curves) | -55 C to +150 C |
| Packing | Tape and Reel (suffix ATMA1) | — |
| Voltage Rating | 60 V to 100 V category (80 V nominal) | — |
| RoHS 状态 | Compliant | Compliant |
| 晶体管类型 | — | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25 C | — | 85 A |
| On-Resistance (RDS(on)) max at VGS=10V | — | 6.5 mOhm |
| Power Dissipation at TA | — | 2.5 W |
| Power Dissipation at TC | — | 100 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| 封装 | — | PG-WHTFN-9-1 (Source-Down) |
| Lead-Free | — | Yes |