IQE065N10NM5CGSCATMA1 vs IQE220N15NM5CGSCATMA1 对比
详细并排对比 IQE065N10NM5CGSCATMA1 出自 Infineon 和 IQE220N15NM5CGSCATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IQE065N10NM5CGSCATMA1 | IQE220N15NM5CGSCATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.28 | $2.18 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | OptiMOS 5 |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25 C | 85 A | — |
| Continuous Drain Current (ID) at TA | 13 A | — |
| On-Resistance (RDS(on)) max at VGS=10V | 6.5 mOhm | — |
| Power Dissipation at TA | 2.5 W | — |
| Power Dissipation at TC | 100 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | 4.6 V |
| 封装 | PG-WHTFN-9-1 (Source-Down) | PG-WHTFN-9 (Source-Down) |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 trench-gate | OptiMOS 5, Source-Down |
| 工作温度范围 | -55 C to +150 C | -55C to +150C (junction) |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current at Ta (ID) | — | 7 A |
| Continuous Drain Current at Tc (ID) | — | 44 A |
| Power Dissipation at Ta (PD) | — | 2.5 W |
| Power Dissipation at Tc (PD) | — | 100 W |
| On-Resistance (RDS(on)) | — | 22 milliohm (max) |