IQE220N15NM5CGATMA1 vs IQE220N15NM5CGSCATMA1 对比
详细并排对比 IQE220N15NM5CGATMA1 出自 Infineon 和 IQE220N15NM5CGSCATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IQE220N15NM5CGATMA1 | IQE220N15NM5CGSCATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.55 | $2.18 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 5 | — |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-to-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at Tc | 44 A | — |
| Continuous Drain Current (ID) at Ta | [DATA_NEEDED: ID at Ta] | — |
| On-State Resistance RDS(on) max | 22 mOhm | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 100 W | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical value] | — |
| 封装 | PG-TTFN-9-3 (Source-Down) | PG-WHTFN-9 (Source-Down) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55C to +175C (estimated from Tj max) | -55C to +150C (junction) |
| Technology | Trench MOSFET, OptiMOS 5 | OptiMOS 5, Source-Down |
| MSL 等级 | 1 (per JEDEC J-STD-020) | — |
| RoHS 状态 | Compliant | Compliant |
| 引脚数量 | 9 (TTFN) | — |
| Series | — | OptiMOS 5 |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current at Ta (ID) | — | 7 A |
| Continuous Drain Current at Tc (ID) | — | 44 A |
| Power Dissipation at Ta (PD) | — | 2.5 W |
| Power Dissipation at Tc (PD) | — | 100 W |
| On-Resistance (RDS(on)) | — | 22 milliohm (max) |
| Gate Threshold Voltage (VGS(th)) | — | 4.6 V |