IQEH46NE2LM7UCGSCATMA1 vs IQEH68NE2LM7UCGATMA1 对比
详细并排对比 IQEH46NE2LM7UCGSCATMA1 出自 Infineon 和 IQEH68NE2LM7UCGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IQEH46NE2LM7UCGSCATMA1 | IQEH68NE2LM7UCGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.65 | $1.35 |
| 晶体管类型 | N-Channel MOSFET | N-Channel MOSFET |
| Technology | OptiMOS 7 (trench) | OptiMOS 7 trench MOSFET |
| Drain-Source Voltage (VDS) | 25 V | 25 V |
| Continuous Drain Current (ID) at TC | 440 A | — |
| Continuous Drain Current (ID) at TA | 57 A | — |
| Power Dissipation at TA | 2.5 W | — |
| Power Dissipation at TC | 150 W | — |
| Maximum On-Resistance (RDS(on)) | 0.46 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | 2 V | — |
| 封装 | PG-WHTFN-9-1 (PQFN 3.3x3.3 Source-Down) | PG-TTFN-9-3 (surface mount) |
| 安装类型 | Surface Mount | Surface Mount |
| Polarity / Channel Type | Single N-Channel | — |
| Operating Mode | Enhancement-mode | — |
| Topology Suitability | Hard- and soft-switching | — |
| RoHS 状态 | Compliant | Compliant (per distributor listing) |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 7 |
| Continuous Drain Current (ID) @ Ta | — | 47 A |
| Pulsed Drain Current (IDM) @ Tc | — | 338 A |
| Power Dissipation (PD) @ Ta | — | 2.5 W |
| Power Dissipation (PD) @ Tc | — | 130 W |
| Gate Threshold Voltage Type | — | Logic-level (per OptiMOS 7 family) |
| On-Resistance Family | — | RDS(on)10 / RDS(on)45 (10V and 4.5V rated) |
| Maximum Junction Temperature | — | 175 °C |
| 工作温度范围 | — | -55 °C to +175 °C (typical for OptiMOS 7) |
| MSL 等级 | — | [DATA_NEEDED: MSL Level] |
| Packaging | — | Tape & Reel (per ATMA1 suffix) |