IQEH46NE2LM7UCGSCATMA1 vs IQEH68NE2LM7UCGATMA1 比較
詳細な並列比較: IQEH46NE2LM7UCGSCATMA1 メーカー: Infineon および IQEH68NE2LM7UCGATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IQEH46NE2LM7UCGSCATMA1 | IQEH68NE2LM7UCGATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.65 | $1.35 |
| トランジスタタイプ | N-Channel MOSFET | N-Channel MOSFET |
| Technology | OptiMOS 7 (trench) | OptiMOS 7 trench MOSFET |
| Drain-Source Voltage (VDS) | 25 V | 25 V |
| Continuous Drain Current (ID) at TC | 440 A | — |
| Continuous Drain Current (ID) at TA | 57 A | — |
| Power Dissipation at TA | 2.5 W | — |
| Power Dissipation at TC | 150 W | — |
| Maximum On-Resistance (RDS(on)) | 0.46 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | 2 V | — |
| パッケージ | PG-WHTFN-9-1 (PQFN 3.3x3.3 Source-Down) | PG-TTFN-9-3 (surface mount) |
| 実装タイプ | Surface Mount | Surface Mount |
| Polarity / Channel Type | Single N-Channel | — |
| Operating Mode | Enhancement-mode | — |
| Topology Suitability | Hard- and soft-switching | — |
| RoHS ステータス | Compliant | Compliant (per distributor listing) |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 7 |
| Continuous Drain Current (ID) @ Ta | — | 47 A |
| Pulsed Drain Current (IDM) @ Tc | — | 338 A |
| Power Dissipation (PD) @ Ta | — | 2.5 W |
| Power Dissipation (PD) @ Tc | — | 130 W |
| Gate Threshold Voltage Type | — | Logic-level (per OptiMOS 7 family) |
| On-Resistance Family | — | RDS(on)10 / RDS(on)45 (10V and 4.5V rated) |
| Maximum Junction Temperature | — | 175 °C |
| 動作温度範囲 | — | -55 °C to +175 °C (typical for OptiMOS 7) |
| MSLレベル | — | [DATA_NEEDED: MSL Level] |
| Packaging | — | Tape & Reel (per ATMA1 suffix) |