IR2010STRPBF vs IR2010SPBF 对比
详细并排对比 IR2010STRPBF 出自 Infineon 和 IR2010SPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IR2010STRPBF | IR2010SPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | Power MOSFET Drivers | Power MOSFET Drivers |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.97 | $1.20 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IR2010STRPBF | — |
| Driver Configuration | Half-Bridge (High-Side / Low-Side) | — |
| 输出数量 | 2 (independent high and low side) | — |
| Peak Output Current (Source/Sink) | 3 A / 3 A | — |
| High-Side Floating Supply Voltage (VBS) | Up to 200 V | — |
| Gate Drive Supply Range (VCC) | 10 V to 20 V | — |
| Logic Supply Range | 3.3 V to 20 V | — |
| Logic Input Compatibility | 3.3 V logic compatible | CMOS or LSTTL, down to 3.0 V |
| Propagation Delay (Typical) | 95 ns | — |
| Undervoltage Lockout | Yes (both channels) | — |
| dV/dt Immunity | Yes | — |
| Negative Transient Tolerance | Yes (on switch node) | — |
| Bootstrap Capable | Yes (floating channel) | — |
| 封装 | 16-SOIC (DW, 0.300 inch, 7.50 mm body width) | 16-SOIC (SOIC-16) |
| 安装类型 | Surface Mount | Surface Mount |
| Shipping Packaging | Tape & Reel (TR) | — |
| Polarity | Non-Inverting | — |
| RoHS 状态 | Compliant (PBF suffix indicates lead-free) | Compliant (Pb-free PBF suffix) |
| Configuration | — | Half-Bridge (high + low side) |
| Number of Drivers | — | 2 (independent high/low-side outputs) |
| Offset Voltage (max) | — | 200 V |
| Peak Source/Sink Current | — | 3 A / 3 A |
| Propagation Delay (typ) | — | 95 ns |
| Rise / Fall Time (typ) | — | [DATA_NEEDED: rise/fall time] |
| VCC Supply Voltage (low side) | — | 10 V to 20 V |
| VB Bootstrap Supply (high side) | — | VCC + 10 V to VCC + 20 V |
| 工作温度 | — | -40C to +150C |
| Shutdown Feature | — | Yes (active input) |
| MSL 等级 | — | [DATA_NEEDED: MSL rating] |
| Drive Technology | — | High-speed power MOSFET / IGBT driver |
| Channel Matching | — | Matched propagation delays for cross-conduction minimization |