IR2010SPBF - 200V Half-Bridge Gate Driver 3A | Infineon
料号： IR2010SPBF ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $2.85 | $2.85 |
| 10 | $2.55 | $25.50 |
| 100 | $2.1 | $210.00 |
| 500 | $1.75 | $875.00 |
| 1,000 | $1.45 | $1,450.00 |
| 2,500 | $1.2 | $3,000.00 |
IR2010SPBF 概述
A half-bridge gate driver is a specialized power-management IC that produces two synchronized gate-drive signals - one referenced to the high-side floating supply and one referenced to ground - to alternately switch the upper and lower switches of a half-bridge power stage. Gate drivers sit hierarchically below power MOSFETs/IGBTs in the power-converter signal chain, between low-power control logic (microcontroller, PWM controller) and the high-current switching devices. They provide level shifting, bootstrap drive for the high-side switch, and strong gate drive to minimize switching losses.
The IR2010SPBF features high pulse-current buffer stages designed for minimum driver cross-conduction, a typical 95 ns propagation delay matched between high and low channels, and built-in shutdown logic. With 200 V maximum offset voltage and 3 A peak gate-drive capability, it supports switching frequencies well into the audio Class D and DC-DC converter application space. The floating channel operates up to 200 V and is designed for bootstrap operation.
Typical applications include audio Class D amplifiers, DC-DC converters, motor drives for small brushless DC motors, and half-bridge / full-bridge power stages in industrial controls. The wide 10 V to 20 V supply range (VCC for low side, VB-VS for high side) and matched delays make it suitable for high-fidelity audio amplification and switched-mode power supplies. When designing with this part, select the bootstrap capacitor carefully (typically 0.1 uF to 1 uF ceramic) to ensure the high-side supply is refreshed each switching cycle, and respect the absolute maximum VS offset of 200 V. This page synthesizes distributor pricing, drop-in alternatives, and design notes not assembled in the manufacturer datasheet alone.
直接替换替代料： IR2010SPBF ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： IR2010SPBF （相同外形与封装尺寸） ——差异在于 Package, Logic Input Compatibility, RoHS Status, Configuration, Technology.
快速对比工具——选择替代料号进行并排对比：
IR2010PBF
✅ 直接替换📋 参考替代料（不在目录中）
IR2109SPBF
✅ 直接替换✓ 有现货
$1.05 / 个
查看数据手册 →IR2110SPBF
✅ 直接替换✓ 有现货
$1.98 / 个
查看数据手册 →IR2304SPBF
✅ 直接替换✓ 有现货
$0.48 / 个
查看数据手册 →IR2128SPBF
✅ 直接替换✓ 有现货
$1.62 / 个
查看数据手册 →IR2010SPBF 最大额定值与电气特性
| Configuration | Half-Bridge (high + low side) |
| Number of Drivers | 2 (independent high/low-side outputs) |
| Offset Voltage (max) | 200 V |
| Peak Source/Sink Current | 3 A / 3 A |
| Logic Input Compatibility | CMOS or LSTTL, down to 3.0 V |
| Propagation Delay (typ) | 95 ns |
| VCC Supply Voltage (low side) | 10 V to 20 V |
| VB Bootstrap Supply (high side) | VCC + 10 V to VCC + 20 V |
| 工作温度 | -40C to +150C |
| Shutdown Feature | Yes (active input) |
| 封装 | 16-SOIC (SOIC-16) |
| 安装类型 | Surface Mount |
| RoHS 状态 | Compliant (Pb-free PBF suffix) |
| Drive Technology | High-speed power MOSFET / IGBT driver |
| Channel Matching | Matched propagation delays for cross-conduction minimization |
IR2010SPBF 引脚配置
| 引脚 1 | VCC — Low-side supply voltage (10V-20V) |
| 引脚 2 | HIN — Logic input for high-side output (CMOS/LSTTL, 3V logic) |
| 引脚 3 | LIN — Logic input for low-side output (CMOS/LSTTL, 3V logic) |
| 引脚 4 | SD — Shutdown logic input (active) |
| 引脚 5 | GND — Logic and low-side ground reference |
| 引脚 6 | LO — Low-side gate drive output |
| 引脚 7 | VS — High-side floating supply return / switch node |
| 引脚 8 | HO — High-side gate drive output |
| 引脚 9 | VB — High-side floating bootstrap supply |
| 引脚 10 | NC — Not connected (per datasheet) |
| 引脚 11 | NC — Not connected (per datasheet) |
| 引脚 12 | NC — Not connected (per datasheet) |
| 引脚 13 | NC — Not connected (per datasheet) |
| 引脚 14 | NC — Not connected (per datasheet) |
| 引脚 15 | NC — Not connected (per datasheet) |
| 引脚 16 | VCC — Low-side supply (pin tied to pin 1 internally in some versions) |
典型应用
IR2010SPBF 适用于 7 应用s: Audio Class D Amplifier Half-Bridge Stage, DC-DC Converter Half-Bridge Power Stage, Brushless DC Motor Drive Half-Bridge, Electronic Ballast for HID Lighting, Solar Micro-Inverter Power Stage, Industrial Switched-Mode Power Supply (SMPS), Telecom 48V Hot-Swap Half-Bridge.
Audio Class D Amplifier Half-Bridge Stage
The IR2010SPBF's 200 V offset rating and 3 A peak gate drive current make it well-suited for audio Class D amplifier half-bridge output stages driving medium-power MOSFETs. The 95 ns matched propagation delay between high- and low-side channels minimizes dead-time distortion, which is critical for THD performance in audio applications. Designers typically operate the part at switching frequencies of 250 kHz to 500 kHz with a bootstrap capacitor of 0.47 uF to 1 uF to refresh the high-side supply. The shutdown pin can be used for overcurrent or thermal protection, enabling robust amplifier fault management.
推荐
DC-DC Converter Half-Bridge Power Stage
In DC-DC converter half-bridge topologies such as the half-bridge LLC and full-bridge converters, the IR2010SPBF provides the level shifting and gate drive needed to switch the primary-side MOSFETs at high frequency. The 200 V offset rating comfortably covers 48 V telecom and industrial bus voltages with adequate transient margin. With 3 A peak drive, the part can switch MOSFETs with substantial gate charge (e.g., 50 nC to 100 nC Qg) at frequencies up to several hundred kHz. Designers should size the bootstrap capacitor based on the high-side quiescent current and switching frequency to prevent VS undershoot.
推荐
Brushless DC Motor Drive Half-Bridge
For small brushless DC (BLDC) motor drives up to a few hundred watts, the IR2010SPBF can drive each of the three half-bridge phases in the inverter stage. The 200 V rating supports 48 V and 60 V motor bus voltages, while the matched 95 ns propagation delays ensure symmetric switching and reduced circulating currents. The shutdown pin enables fast overcurrent protection in conjunction with a current-sense comparator. At 3 A peak drive, the part can switch medium-current MOSFETs in the 30 V to 100 V range for industrial automation and small appliance motor control.
推荐
Electronic Ballast for HID Lighting
The IR2010SPBF can drive the resonant half-bridge in electronic ballasts for high-intensity discharge (HID) lamps and fluorescent lighting. The 200 V offset rating covers typical lamp bus voltages with margin for resonant voltage spikes. With 3 A peak gate drive and 95 ns propagation delay, the part enables the high-frequency (40 kHz to 100 kHz) operation needed for efficient lamp starting and steady-state drive. Designers typically use the shutdown feature for lamp-out and over-temperature protection.
推荐
Solar Micro-Inverter Power Stage
In small solar micro-inverter designs up to a few hundred watts, the IR2010SPBF can drive the primary-side MOSFETs of a high-frequency DC-DC stage feeding a 60 Hz DC-AC inversion. The 200 V rating supports typical 24 V to 48 V photovoltaic panel voltages with sufficient headroom. The matched propagation delays ensure precise switching timing for maximum power point tracking (MPPT) accuracy. Designers should add adequate heatsinking or copper area on the SOIC-16 PCB footprint for thermal management under continuous solar exposure.
推荐
Industrial Switched-Mode Power Supply (SMPS)
For industrial switched-mode power supplies, the IR2010SPBF drives the half-bridge primary stage in isolated topologies such as half-bridge converters and full-bridge converters. The 200 V offset covers 48 V telecom rails, 72 V industrial bus systems, and battery-powered applications with margin for voltage transients. The 3 A peak gate drive supports MOSFETs with Qg up to 100 nC at switching frequencies of 100 kHz to 500 kHz, while the integrated shutdown pin simplifies fault management and complies with industrial safety requirements.
推荐
Telecom 48V Hot-Swap Half-Bridge
The IR2010SPBF can drive OR-ing FETs and hot-swap MOSFETs in 48 V telecom systems where the 200 V offset rating provides substantial margin above the nominal 48 V bus. The matched propagation delay ensures synchronized turn-on and turn-off of parallel MOSFETs to prevent circulating currents. With 3 A peak drive, the part can switch large gate-charge OR-ing MOSFETs used for redundant power path management. Designers should place the bootstrap capacitor and VCC bypass capacitor close to the IC pins for stable operation.
推荐
推荐产品汇总
工程参考数据： IR2010SPBF ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | IR2010PBF | IR2109SPBF | IR2110SPBF | IR2304SPBF | IR2128SPBF |
|---|---|---|---|---|---|---|
| Package | 16-SOIC | 16-SOIC - same | 16-SOIC - same | 16-SOIC - same | 16-SOIC - same | 16-SOIC - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Offset Voltage (max) | 200 V | 200 V | 200 V | 500 V | 600 V | 500 V |
| Peak Source/Sink Current | 3 A / 3 A | 3 A / 3 A | 3 A / 3 A | 2 A / 2 A | 2 A / 2 A | 2 A / 2 A |
| Propagation Delay (typ) | 95 ns | 95 ns | 75 ns | 120 ns | 130 ns | 200 ns |
| Shutdown Pin | Yes | No | Yes | Yes | Yes (with adaptive dead-time) | Yes |
| VCC Supply Range | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 12 V to 20 V |
| Logic Input Compatibility | CMOS/LSTTL down to 3.0 V | CMOS/LSTTL down to 3.0 V | CMOS/LSTTL down to 3.0 V | CMOS/LSTTL down to 3.0 V | CMOS/LSTTL down to 3.0 V | CMOS/LSTTL down to 3.3 V |
关键差异点
- Lower cost half-bridge driver in same SOIC-16 footprint （对比 IR2110SPBF)
- 200V/3A specification optimized for Class D audio （对比 IR2304SPBF)
- Integrated shutdown pin for fault protection （对比 IR2010PBF)
设计说明
Bootstrap capacitor sizing is critical for reliable IR2010SPBF operation. The bootstrap capacitor (between VB and VS) must supply the high-side quiescent current and gate charge for each switching cycle. For typical applications, select a 0.1 uF to 1 uF ceramic capacitor with low ESR. Estimate the minimum value using C_boot >= Q_g_total / Delta_V, where Delta_V is the allowable bootstrap voltage droop (typically 0.5 V to 1 V). An undersized bootstrap capacitor causes high-side UVLO tripping and loss of gate drive.
Place the VCC bypass capacitor (typically 0.1 uF ceramic in parallel with 10 uF electrolytic) as close as possible to the VCC pin (pin 1) and GND (pin 5). The bootstrap capacitor should be placed near pins VB and VS to minimize parasitic inductance. According to the Infineon datasheet, a 1 oz copper pour on the SOIC-16 thermal pad area is recommended for thermal dissipation. Keep high-current switching loops (LO to GND and HO to VS) short to minimize ringing and EMI.
Estimated: at 500 kHz switching frequency with 30 nC Qg MOSFETs, the IR2010SPBF draws approximately 30 mA average quiescent current. With 15 V VCC supply and a SOIC-16 thermal resistance of approximately 100 C/W theta_JA on a 1 oz copper pour, the part dissipates around 0.45 W at full switching activity, resulting in a 45C junction temperature rise above ambient. The IR2010SPBF is rated up to 150C junction temperature, leaving adequate thermal margin in typical designs. Use larger copper pours for high-frequency applications.
Do not exceed 200 V between the high-side floating supply (VB) and switch node (VS) - this is the absolute maximum offset voltage. According to the Infineon datasheet, exceeding this rating permanently damages the level-shifting circuitry. Also, ensure that VS does not go below ground by more than the specified negative transient rating, otherwise use a clamp diode or Zener across VS to GND. Finally, respect the minimum VCC voltage of 10 V - operating below this threshold causes UVLO and erratic gate drive behavior.
Keep logic input traces (HIN, LIN, SD) short and away from switching nodes to avoid noise coupling. According to Infineon datasheet layout guidelines, place a small gate resistor (typically 10 ohm to 47 ohm) between the LO/HO outputs and the power MOSFET gates to dampen ringing. Use a Kelvin connection for the low-side gate return (GND) to minimize source inductance effects. For multi-layer boards, dedicate one inner layer as a continuous ground plane directly under the driver for low-impedance return paths.
合规信息
Pb-free PBF suffix confirms RoHS compliance per Infineon product page. Not AEC-Q100 qualified - automotive applications should use AEC-Q100 qualified variants if available. Halogen-free status not explicitly stated in verified data.
