IR21271SPBF vs IR2127SPBF 对比

详细并排对比 IR21271SPBF 出自 Infineon 和 IR2127SPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IR21271SPBF IR2127SPBF
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.71 $0.74
Product Type Single-channel high-side gate driver with current sensing —
Technology HVIC and latch-immune CMOS —
Maximum Floating Supply Voltage 600 V —
Output Source Current 0.25 A —
Output Sink Current 0.5 A —
Gate Drive Voltage Range 9 V to 20 V (per related IR2127 datasheet family) —
Configuration High-side, low-side capable (floating channel) —
Input Logic Compatibility 3.3 V CMOS / LSTTL —
Input Type Non-inverting —
Negative Transient Tolerance (dV/dt) Tolerant —
Bootstrap Operation Supported (floating channel) —
Integrated Current Sensing Yes —
封装 8-SOIC 8-SOIC (SOIC-8)
Lead Finish Lead-free (PbF) —
工作温度范围 -40C to +125C (industrial) —
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant Compliant (Pb-free suffix PBF)
Number of Channels 1 —
Channel Type — Single-channel, High-Side
Gate Driver Configuration — Non-Inverting Input
输出数量 — 1
Peak Source Current (typ) — 0.25 A
Peak Sink Current (typ) — 0.5 A
Maximum Offset Voltage (High-Side) — +600 V
Negative Transient Tolerance — dV/dt immune, negative transient tolerant
Supply Voltage (VCC) — 10 V to 20 V
Logic Input Compatibility — CMOS / LSTTL, 3.3 V to VCC
Propagation Delay (typ) — 150 ns
Rise Time (typ, 1 nF load) — 80 ns
Fall Time (typ, 1 nF load) — 40 ns
Protection Features — Overcurrent detection with DESAT-style comparator, fault output
工作温度 — -40 °C to +125 °C

数据手册与资源

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