IR2127STRPBF vs IRS2109STRPBF 对比

详细并排对比 IR2127STRPBF 出自 Infineon 和 IRS2109STRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IR2127STRPBF IR2127STRPBF - 600V High-Side Gate Driver IC | Infineon

IR2127STRPBF - 600V High-Side Gate Driver IC | Infineon

IR2127STRPBF ✓ 量产中

规格对比

参数 IR2127STRPBF IRS2109STRPBF
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.71 $0.61
Configuration High-Side Half-Bridge
Supply Voltage Range 12 V to 20 V —
Output Voltage (Offset) up to 600 V —
Peak Source Current 250 mA —
Peak Sink Current 500 mA —
Propagation Delay 200 ns (typical) —
Input Logic Non-Inverting —
输出数量 1 —
上升时间 80 ns (typical) —
下降时间 60 ns (typical) —
工作温度范围 -40C to +125C —
封装 8-SOIC (3.90 mm body) 8-SOIC (3.90 mm body width)
安装类型 Surface Mount Surface Mount
MSL 等级 MSL3 (per JEDEC J-STD-020) 1 (unlimited floor life at <30C / 85% RH)
Lead-Free / RoHS Pb-free (PBF), RoHS compliant Yes (Pb-free suffix 'PBF')
dV/dt Immunity Yes (high-side floating channel) —
Integrated Current Sense Yes (cycle-by-cycle comparator) —
Input Type — Non-Inverting, Single Input
Number of Drivers — 2 (high-side + low-side)
High-Side Voltage (VOffset) — 600 V maximum
Supply Voltage (VCC) — 10 V to 20 V
Logic Input Voltage — Compatible with 3.3 V and 5 V logic
Source Current (typical) — 290 mA
Sink Current (typical) — 600 mA
Propagation Delay (ton/off) — 540 ns (typical)
Deadtime — 540 ns (fixed, internal)
Rise Time (typical) — [DATA_NEEDED: rise time]
Fall Time (typical) — [DATA_NEEDED: fall time]
工作温度 — -40C to +125C
Packaging — Tape and Reel (TR suffix)

数据手册与资源

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