IR2304SPBF vs IR2109STRPBF 对比

详细并排对比 IR2304SPBF 出自 Infineon 和 IR2109STRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IR2109STRPBF IR2109STRPBF - 600V Half-Bridge Gate Driver IC | Infineon

IR2109STRPBF - 600V Half-Bridge Gate Driver IC | Infineon

IR2109STRPBF ✓ 量产中

规格对比

参数 IR2304SPBF IR2109STRPBF
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.48 $0.61
Product Type Half-Bridge Gate Driver IC Half-Bridge Gate Driver IC
Configuration High and Low Side, Independent Channels Half-Bridge (High-Side + Low-Side)
输出数量 2 2 (High-Side / Low-Side)
Maximum Offset (Bootstrap) Voltage 600 V —
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Output Source/Sink Current 60 mA / 130 mA —
Propagation Delay (Typical) 220 ns —
Input Logic Compatibility 3.3 V, 5 V, 15 V —
Undervoltage Lockout (UVLO) Both High-Side and Low-Side Channels —
Negative Transient Voltage Tolerance Yes (dV/dt immune) —
Logic Input Polarity Non-Inverting —
封装 8-Pin SOIC (SO-8 N) 8-SOIC (3.90 mm Width)
安装类型 Surface Mount Surface Mount
工作温度范围 -40 C to +125 C —
Technology HVIC + Latch-Immune CMOS, Monolithic —
RoHS 状态 Compliant (Pb-free) Compliant
High-Side Offset Voltage (Max) — 600 V
Supply Voltage (VCC) — 10 V to 20 V
Peak Source Output Current — 0.2 A (typ)
Peak Sink Output Current — 0.35 A (typ)
Propagation Delay (typ) — 750 ns
Rise/Fall Time (typ) — [DATA_NEEDED: rise/fall time]
ton / toff (typ) — 540 ns
Input Logic — Non-Inverting
UVLO — Yes (VCC and VBS)
Bootstrap Diode — Integrated
Dead Time Control — Built-in
dV/dt Immunity — Yes
Negative VS Transient Tolerance — Yes
工作温度 — -40 C to +125 C

数据手册与资源

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