IRF2907ZSTRLPBF vs IPB90N06S4L04ATMA2 对比
详细并排对比 IRF2907ZSTRLPBF 出自 Infineon 和 IPB90N06S4L04ATMA2 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRF2907ZSTRLPBF | IPB90N06S4L04ATMA2 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.55 | $0.94 |
| Transistor Polarity | N-Channel | — |
| Drain-Source Voltage V(BR)DSS | 75 V | — |
| 连续漏极电流（TC=25°C） | 170 A | — |
| 连续漏极电流（TC=100°C） | [DATA_NEEDED: ID at TC=100C] | — |
| RDS(on) max at VGS = 10 V | 4.5 mOhm | — |
| RDS(on) typical at VGS = 10 V | 3.5 mOhm | — |
| Gate Threshold Voltage VGS(th) | 2.0 V to 4.0 V | — |
| Maximum Power Dissipation (TC = 25 C) | 300 W | — |
| 工作结温 | -55 C to +175 C | — |
| Technology | IR HEXFET / IR MOSFET | OptiMOS T2, N-channel enhancement mode |
| 封装 | D2PAK (TO-263AB) surface mount | PG-TO263-3-2 (D2PAK) |
| 引脚数量 | 3 (Gate, Drain, Source) | — |
| 安装类型 | Surface Mount (SMD) | Surface Mount |
| Packaging | Tape and Reel (left orientation) | — |
| Lead-Free | Yes (PBF suffix) | — |
| RoHS 状态 | Compliant | — |
| Avalanche Rating | Repetitive avalanche allowed up to TJ(max) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPB90N06S4L04ATMA2 |
| Drain-Source Voltage (V_DSS) | — | 60 V |
| Continuous Drain Current (I_D, Tc) | — | 90 A |
| Pulsed Drain Current (I_D,pulse) | — | 360 A |
| Power Dissipation (P_D, Tc) | — | 150 W |
| On-State Resistance R_DS(on) (typ @ VGS=10V) | — | 3.4 mΩ |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th)] |
| Gate-Source Voltage (V_GS) | — | ±20 V |
| 工作温度范围 | — | -55 °C to +175 °C |
| MSL 等级 | — | MSL1 (unlimited floor life) |
| Peak Reflow Temperature | — | 260 °C |
| AEC-Q101 Qualification | — | Qualified (automotive grade) |
| Avalanche Tested | — | 100% avalanche-tested |
| RoHS / Halogen-Free | — | Yes (Green Product) |