IRF3205STRLPBF vs IRLL024ZTRPBF 对比
详细并排对比 IRF3205STRLPBF 出自 Infineon 和 IRLL024ZTRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRF3205STRLPBF | IRLL024ZTRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.02 | $0.46 |
| Polarity | N-Channel | — |
| MOSFET Operating Mode | Enhancement | — |
| Drain-Source Voltage (Vdss) | 55 V | — |
| Continuous Drain Current (Id) @ Tc=25°C | 110 A | — |
| Pulsed Drain Current (Idm) | 390 A | — |
| Static Drain-Source On-Resistance (Rds(on)) | 8 mΩ max @ Vgs=10V | — |
| Gate-Source Threshold Voltage (Vgs(th)) | 2.0 V to 4.0 V | — |
| Total Gate Charge (Qg) | 97.3 nC typical | — |
| Power Dissipation (Pd) @ Tc=25°C | 200 W | — |
| 工作温度范围 | -55 °C to +175 °C (Tj) | — |
| 封装 | TO-263-3 (D2PAK) | SOT-223 (TO-261-4) |
| 安装类型 | Surface Mount | Surface Mount |
| Lead-Free / RoHS Status | Lead-Free / RoHS Compliant (PBF suffix) | — |
| Technology | HEXFET (advanced process) | HEXFET Power MOSFET (trench-gate) |
| Packaging | Tape & Reel (STRL) | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| FET Type | — | N-Channel enhancement-mode |
| Drain-Source Voltage (VDS) max | — | 55 V |
| Gate-Source Voltage (VGS) max | — | ±16 V |
| Continuous Drain Current (ID) at TC=25°C | — | 5 A |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | — | 60 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 1.0 V to 2.5 V (logic-level, drives from 3.3 V GPIO) |
| Total Gate Charge (Qg) typical | — | 7 nC |
| Power Dissipation (PD) at TA=25°C | — | 1 W |
| Operating Junction Temperature (TJ) | — | -55 °C to +150 °C |
| MSL 等级 | — | 1 (unlimited floor life) |
| RoHS 状态 | — | Compliant |