IRF4905LPBF vs IRF4905SPBF 对比

详细并排对比 IRF4905LPBF 出自 Infineon 和 IRF4905SPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRF4905LPBF IRF4905SPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.98 $1.18
Polarity P-Channel P-Channel
Drain-Source Voltage (Vds) -55 V —
Continuous Drain Current (Id) @ Tc=25C -74 A —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
On-Resistance Rds(on) max @ Vgs=-10V 20 mOhm —
Gate Threshold Voltage Vgs(th) typ [DATA_NEEDED: Vgs(th) typical] —
Gate-Source Voltage (Vgs) max ±20 V —
Total Power Dissipation (Ptot) @ Tc=25C 200 W —
工作结温 -55C to +150C -55 C to +150 C
Thermal Resistance Junction-to-Case (RthJC) [DATA_NEEDED: RthJC value] —
Rise Time (tr) typ [DATA_NEEDED: rise time] —
Fall Time (tf) typ [DATA_NEEDED: fall time] —
封装 TO-262 (I2PAK), through-hole, 3-pin D2PAK (TO-263) surface mount
Technology HEXFET (IR MOSFET) HEXFET, planar cell
安装类型 Through Hole Surface Mount
Lead-Free / RoHS Yes (PbF suffix) —
Avalanche Rated Yes —
Drain-Source Voltage (VDS) — -55 V
Continuous Drain Current (ID, Tc=25C) — -42 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance (RDS(on) max) — 20 mOhm @ VGS = -10V
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max, typical +/-20V]
Gate Threshold Voltage (VGS(th)) — -2.0 V to -4.0 V
Power Dissipation (PD, Tc=25C) — 170 W
Thermal Resistance, Junction-to-Case (RthJC) — [DATA_NEEDED: RthJC, typical 0.6 C/W]
Total Gate Charge (Qg) — 120 nC (typical per Mouser listing)
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
RoHS 状态 — Compliant (PBF suffix indicates Pb-free)
Qualification — JEDEC standard

数据手册与资源

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