IRF4905LPBF vs IRF4905SPBF Comparison

Detailed side-by-side comparison of IRF4905LPBF by Infineon and IRF4905SPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF4905LPBF IRF4905SPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.98 $1.18
Polarity P-Channel P-Channel
Drain-Source Voltage (Vds) -55 V β€”
Continuous Drain Current (Id) @ Tc=25C -74 A β€”
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] β€”
On-Resistance Rds(on) max @ Vgs=-10V 20 mOhm β€”
Gate Threshold Voltage Vgs(th) typ [DATA_NEEDED: Vgs(th) typical] β€”
Gate-Source Voltage (Vgs) max Β±20 V β€”
Total Power Dissipation (Ptot) @ Tc=25C 200 W β€”
Operating Junction Temperature -55C to +150C -55 C to +150 C
Thermal Resistance Junction-to-Case (RthJC) [DATA_NEEDED: RthJC value] β€”
Rise Time (tr) typ [DATA_NEEDED: rise time] β€”
Fall Time (tf) typ [DATA_NEEDED: fall time] β€”
Package TO-262 (I2PAK), through-hole, 3-pin D2PAK (TO-263) surface mount
Technology HEXFET (IR MOSFET) HEXFET, planar cell
Mounting Type Through Hole Surface Mount
Lead-Free / RoHS Yes (PbF suffix) β€”
Avalanche Rated Yes β€”
Drain-Source Voltage (VDS) β€” -55 V
Continuous Drain Current (ID, Tc=25C) β€” -42 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
On-Resistance (RDS(on) max) β€” 20 mOhm @ VGS = -10V
Gate-Source Voltage (VGS) max β€” [DATA_NEEDED: VGS max, typical +/-20V]
Gate Threshold Voltage (VGS(th)) β€” -2.0 V to -4.0 V
Power Dissipation (PD, Tc=25C) β€” 170 W
Thermal Resistance, Junction-to-Case (RthJC) β€” [DATA_NEEDED: RthJC, typical 0.6 C/W]
Total Gate Charge (Qg) β€” 120 nC (typical per Mouser listing)
Input Capacitance (Ciss) β€” [DATA_NEEDED: Ciss]
RoHS Status β€” Compliant (PBF suffix indicates Pb-free)
Qualification β€” JEDEC standard

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