IRF4905SPBF vs BSZ15DC02KDHXTMA1 对比

详细并排对比 IRF4905SPBF 出自 Infineon 和 BSZ15DC02KDHXTMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSZ15DC02KDHXTMA1 BSZ15DC02KDHXTMA1 - 20V Complementary N+P MOSFET | Infineon

BSZ15DC02KDHXTMA1 - 20V Complementary N+P MOSFET | Infineon

BSZ15DC02KDHXTMA1 ✓ 量产中

规格对比

参数 IRF4905SPBF BSZ15DC02KDHXTMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.18 $0.74
Polarity P-Channel —
Drain-Source Voltage (VDS) -55 V —
Continuous Drain Current (ID, Tc=25C) -42 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance (RDS(on) max) 20 mOhm @ VGS = -10V —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max, typical +/-20V] —
Gate Threshold Voltage (VGS(th)) -2.0 V to -4.0 V —
Power Dissipation (PD, Tc=25C) 170 W —
工作结温 -55 C to +150 C -55 C to +175 C
Thermal Resistance, Junction-to-Case (RthJC) [DATA_NEEDED: RthJC, typical 0.6 C/W] —
封装 D2PAK (TO-263) surface mount PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm, 8-pin with exposed pad)
安装类型 Surface Mount Surface Mount
Technology HEXFET, planar cell OptiMOS™2 (N-ch) + OptiMOS™-P2 (P-ch)
Total Gate Charge (Qg) 120 nC (typical per Mouser listing) —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
RoHS 状态 Compliant (PBF suffix indicates Pb-free) —
Qualification JEDEC standard —
Manufacturer — Infineon Technologies
Part Number — BSZ15DC02KDHXTMA1
晶体管类型 — N-Channel + P-Channel (complementary pair)
Drain-to-Source Voltage (VDS) Max — 20 V
N-Channel Continuous Drain Current (ID) — 5.1 A
P-Channel Continuous Drain Current (ID) — 3.2 A
N-Channel RDS(on) Max — [DATA_NEEDED: N-ch RDS(on) value in mohm]
P-Channel RDS(on) Max — 55 mOhm (per Infineon part summary)
Gate Drive Level — Super Logic level, 2.5 V rated
Configuration — Common drain (back-to-back source pair)
Total Package Power Dissipation (PD) — 2.5 W @ 25 C (per DigiKey listing)
Avalanche Rated — Yes
Automotive Qualification — AEC-Q101 qualified
Lead-Free / RoHS — Yes / RoHS compliant

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