IRF4905STRLPBF vs IRF4905STRRPBF 对比
详细并排对比 IRF4905STRLPBF 出自 Infineon 和 IRF4905STRRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRF4905STRLPBF | IRF4905STRRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.95 | $0.94 |
| FET Type | P-Channel | — |
| Drain-Source Voltage (VDS) | -55 V | -55 V |
| Continuous Drain Current (ID) at Tc=25C | -74 A | — |
| Pulsed Drain Current (IDM) | -260 A | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | ±20 V | ±20 V |
| On-Resistance RDS(on) at VGS=-10V | 20 mOhm | — |
| Total Gate Charge (Qg) | 120 nC | 120 nC |
| Power Dissipation (PD) at Tc=25C | 170 W | — |
| 工作温度范围 | -55C to +175C | — |
| 封装 | D2PAK (TO-263) | D2PAK (TO-263-3) |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | HEXFET (Planar) | HEXFET (Advanced Process) |
| MSL 等级 | 1 | — |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Polarity | — | P-Channel |
| Continuous Drain Current (ID) at TC=25C | — | -74 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| RDS(on) max at VGS=-10V | — | 20 mOhm |
| RDS(on) max at VGS=-4.5V | — | [DATA_NEEDED: RDS(on) at VGS=-4.5V] |
| Gate Threshold Voltage (VGS(th)) | — | -2.0 V to -4.0 V |
| Power Dissipation (PD) at TC=25C | — | 170 W |
| 工作结温 | — | -55 C to +175 C |