IRF7105TRPBF vs FDS6575 对比
详细并排对比 IRF7105TRPBF 出自 Infineon 和 FDS6575 出自 onsemi。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRF7105TRPBF | FDS6575 |
|---|---|---|
| 品牌 | Infineon | onsemi |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.30 | $0.28 |
| Manufacturer | Infineon Technologies | — |
| Part Series | IRF7105 (HEXFET Fifth Generation) | — |
| Polarity / Configuration | N-Channel + P-Channel, dual MOSFET in one package | — |
| Drain-to-Source Voltage (Vds) | 25 V | — |
| Continuous Drain Current - N-channel (Id, N-ch) | 3.5 A | — |
| Continuous Drain Current - P-channel (Id, P-ch) | 2.3 A | — |
| Rds(on) Maximum | 100 mOhm | — |
| Technology | HEXFET (IR MOSFET, fifth generation) | PowerTrench (rugged gate) |
| 封装 | 8-SO (SOIC-8) | SOIC-8 (SO-8) |
| Total Package Power Dissipation (Pd) | 2 W | — |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | [DATA_NEEDED: junction temperature range] | [DATA_NEEDED: operating temperature range] |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: typical Vgs(th)] | — |
| Packaging Form | Tape & Reel (TR) | — |
| Lead-Free / RoHS Status | Pb-free (PBF suffix), RoHS compliant | — |
| 引脚数量 | 8 | — |
| Polarity | — | P-Channel |
| Drain-Source Voltage (VDS) | — | -20 V |
| Continuous Drain Current (ID) | — | -10 A |
| On-Resistance (RDS(on)) | — | 13 mOhm max at VGS = -4.5 V |
| Gate Drive Voltage Range | — | 2.5 V to 8 V |
| 栅极阈值电压 | — | [DATA_NEEDED: gate threshold voltage range] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation | — | [DATA_NEEDED: power dissipation at TA] |
| Configuration | — | Single MOSFET |
| Gate Source Voltage (VGS) Range | — | [DATA_NEEDED: VGS max rating] |
| RoHS 状态 | — | Compliant |