IRF7205TRPBF vs IRFR5505TRLPBF 对比

详细并排对比 IRF7205TRPBF 出自 Infineon 和 IRFR5505TRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRFR5505TRLPBF IRFR5505TRLPBF - P-Ch 55V 18A 110mOhm DPAK MOSFET | Infineon

IRFR5505TRLPBF - P-Ch 55V 18A 110mOhm DPAK MOSFET | Infineon

IRFR5505TRLPBF ✓ 量产中

规格对比

参数 IRF7205TRPBF IRFR5505TRLPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.18 $0.38
FET Type P-Channel MOSFET —
Technology IR HEXFET (4th generation) IR MOSFET™ (HEXFET® generation 5)
Drain-to-Source Voltage (VDS) -30 V —
Continuous Drain Current (ID) at TA=25°C -4.6 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] [DATA_NEEDED: IDM]
On-Resistance RDS(on) max @ VGS=-10V 70 mΩ —
On-Resistance RDS(on) max @ VGS=-4.5V 130 mΩ —
Gate Threshold Voltage VGS(th) -1.0 V to -3.0 V —
Total Gate Charge Qg 27 nC —
功耗(TC=25°C) 2.5 W —
工作结温 -55 °C to +150 °C —
封装 SO-8 (8-SO) TO-252AA (DPAK), surface mount
安装类型 Surface Mount Surface Mount
RoHS / Lead-Free Lead-Free (PBF suffix), RoHS compliant —
Packaging Tape & Reel (TR suffix) —
Polarity — P-Channel
MOSFET Operating Mode — Enhancement
VDS (Drain-Source Voltage) — -55 V
VGS (Gate-Source Voltage) — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) — -18 A (Tc)
On-Resistance RDS(on) max — 110 mOhm (VGS = -10 V)
Total Gate Charge (Qg) — 21.3 nC
Power Dissipation (PD) — 57 W (Tc = 25 °C)
工作温度范围 — -55 °C to +175 °C
Thermal Resistance Junction-to-Case (RθJC) — [DATA_NEEDED: RθJC]
Lead-Free / RoHS — Yes (PBF suffix)
MSL 等级 — 1

数据手册与资源

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