IRF7306TRPBF vs IRF7351TRPBF 对比

详细并排对比 IRF7306TRPBF 出自 Infineon 和 IRF7351TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRF7306TRPBF IRF7351TRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.55 $0.68
Polarity P-Channel (dual) —
Number of Channels 2 (independent, in single package) —
Drain-to-Source Voltage (VDS) -30 V —
Continuous Drain Current (ID) -3.6 A at 25°C 8 A
On-Resistance RDS(on) max 100 mOhm at VGS = -10 V 17.8 mOhm
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical/min/max] —
Total Gate Charge Qg [DATA_NEEDED: Qg total] —
Maximum Power Dissipation 2 W at TA = 25°C —
Technology HEXFET Power MOSFET (Generation V) IR MOSFET (HEXFET trench)
工作温度范围 -55°C to +150°C (junction) —
封装 8-SOIC (SO-8, 0.154 inch / 3.90 mm body width) 8-SO (SO-8 / SOIC-8) Surface Mount
安装类型 Surface Mount Surface Mount
Packaging Tape & Reel (TR) —
MSL 等级 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL Level]
RoHS Compliance Yes (PBF suffix indicates Pb-free) —
Qualification Consumer market qualification standards (per IR/Infineon datasheet) —
Avalanche Rated Yes (ruggedized device per datasheet) —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRF7351TRPBF
Configuration — Dual N-Channel MOSFET (Half-Bridge)
Drain-Source Voltage (VDS) — 60 V
On-Resistance RDS(on) typ (per digchips) — 0.0137 ohm (13.7 mOhm)
Total Gate Charge (Qg) — 24 nC
Power Dissipation (PD) — 2 W
工作温度 — -55C to +150C (junction)
Typical Application — Synchronous Rectifier for Isolated DC-DC Converters
RoHS 状态 — Compliant (PBF suffix = lead-free)
Lead-Free — Yes
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min]

数据手册与资源

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