IRF7306TRPBF vs IRF7351TRPBF 비교

다음의 상세 나란히 비교: IRF7306TRPBF 제조: Infineon 및 IRF7351TRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRF7306TRPBF IRF7351TRPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.55 $0.68
Polarity P-Channel (dual) —
Number of Channels 2 (independent, in single package) —
Drain-to-Source Voltage (VDS) -30 V —
Continuous Drain Current (ID) -3.6 A at 25°C 8 A
On-Resistance RDS(on) max 100 mOhm at VGS = -10 V 17.8 mOhm
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical/min/max] —
Total Gate Charge Qg [DATA_NEEDED: Qg total] —
Maximum Power Dissipation 2 W at TA = 25°C —
Technology HEXFET Power MOSFET (Generation V) IR MOSFET (HEXFET trench)
동작 온도 범위 -55°C to +150°C (junction) —
패키지 8-SOIC (SO-8, 0.154 inch / 3.90 mm body width) 8-SO (SO-8 / SOIC-8) Surface Mount
실장 유형 Surface Mount Surface Mount
Packaging Tape & Reel (TR) —
MSL 레벨 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL Level]
RoHS Compliance Yes (PBF suffix indicates Pb-free) —
Qualification Consumer market qualification standards (per IR/Infineon datasheet) —
Avalanche Rated Yes (ruggedized device per datasheet) —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRF7351TRPBF
Configuration — Dual N-Channel MOSFET (Half-Bridge)
Drain-Source Voltage (VDS) — 60 V
On-Resistance RDS(on) typ (per digchips) — 0.0137 ohm (13.7 mOhm)
Total Gate Charge (Qg) — 24 nC
Power Dissipation (PD) — 2 W
동작 온도 — -55C to +150C (junction)
Typical Application — Synchronous Rectifier for Isolated DC-DC Converters
RoHS 상태 — Compliant (PBF suffix = lead-free)
Lead-Free — Yes
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min]

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