IRF7342PBF vs IRF7342TRPBF 对比
详细并排对比 IRF7342PBF 出自 Infineon 和 IRF7342TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRF7342PBF | IRF7342TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.89 | $0.48 |
| Manufacturer | Infineon Technologies | Infineon Technologies (formerly International Rectifier) |
| Part Number | IRF7342PBF | IRF7342TRPBF |
| Original Mfr | International Rectifier (now Infineon) | — |
| Technology | HEXFET (Gen V) - P-Channel MOSFET Array | HEXFET Power MOSFET (Fifth Generation), P-Channel |
| Configuration | Dual P-Channel (2 independent MOSFETs) | Dual P-Channel MOSFET Array (two independent P-FETs in one package) |
| Drain-Source Voltage V(DSS) | -55 V | — |
| Continuous Drain Current I(D) | 3.4 A | — |
| On-Resistance R(DS(on)) | 0.105 ohm | — |
| Power Dissipation P(D) | 2 W | — |
| 安装类型 | Surface Mount | Surface Mount |
| 封装 / 外壳 | 8-SOIC (SO-8) | — |
| 工作温度范围 | [DATA_NEEDED: operating temperature range] | -55 C to +150 C (Tj) |
| Gate Threshold Vgs(th) | [DATA_NEEDED: Vgs(th)] | — |
| Switching Frequency Optimization | < 100 kHz | — |
| RoHS 状态 | Compliant | — |
| Halogen Status | Halogen-Free | — |
| Qualification | JEDEC standard | — |
| Drain-Source Voltage (Vds) | — | -55 V |
| Continuous Drain Current (Id) | — | -3.4 A at 25 C |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed drain current] |
| Gate Threshold Voltage (Vgs(th)) | — | -1.0 V to -3.0 V (typ -1.7 V) |
| Drain-Source On-Resistance (RDS(on)) | — | 0.105 ohm max at VGS = -10 V |
| Maximum Power Dissumption (Pd) | — | 2 W |
| 封装 | — | 8-SOIC (SO-8), surface mount |
| Packaging | — | Tape and Reel (TR) |
| Lead-Free / RoHS | — | Yes (PBF suffix indicates lead-free, RoHS compliant) |
| Channel Type | — | P-Channel (enhancement mode) |
| Number of Channels | — | 2 (dual array) |